基于MEMS-CMOS技术集成的引信执行级电路模块化基础研究

项目名称： 基于MEMS-CMOS技术集成的引信执行级电路模块化基础研究

项目编号： No.61471326

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 无线电电子学、电信技术

项目作者： 穆继亮

作者单位： 中北大学

项目金额： 80万元

中文摘要： 小口径武器系统在长期勤务和瞬时发射条件下，温度、电场及过载等外场环境极易导致引信执行级电路老化和失效；同时，引信（尤其是其执行电路）体积和重量大，降低了弹丸的装药量，严重影响了弹丸的杀伤效果。针对上述问题，本项目提出一种基于MEMS-CMOS集成制造技术的智能引信执行级电路模块化新方法。利用微纳制造尺度效应，系统研究MEMS发火电容器制造工艺，揭示结构尺寸、电极材料和介质介电常数及厚度等因素对电容器容值、工作电压及漏电流等参数的影响机理；利用力学、热学、电学和分子运动学等基础理论，研究基于MEMS-CMOS集成工艺的协同设计和兼容制造技术问题，揭示器件集成制造工艺与应力、温度、电场和分子扩散之间的依赖关系，建立参数之间的影响机制，实现基于MEMS和CMOS模块的单芯片一体化集成。本研究为微型化、长寿命和抗高过载的引信执行级电路设计和开发提供基础理论指导和关键技术支持。

中文关键词： 智能引信；执行级电路；MEMS；CMOS；模块集成

英文摘要： The fuze in minor-caliber weapon systems is easily getting perished and over-load invalid induced by temperature, electric and stress field during the long-time working or instantaneous emission. Further, we can improve the wounding effects of projectiles effenciently by decreasing the weight or volume, and inceasing the the charge of the projectile. Therefore, we developed a novel method named modularity circuit of intelligent fuze in execution level based on MEMS-CMOS integrated technology. We will investigate the fabrication process of MEMS ignition capacitor systematically, and clarify the capacitance, bias voltage and the leaking current dependence of dimension of the structure, material of the electrode, dielectric constant based on micro-nano effect using this method.We also determine the Compatible technology to preclaim the relationship between the fabrication process and stress, temperature, electric field, molecular diffusion produced in the process in MEMS-CMOS integrated technology theoritically and experimently. Finally, we can setup a system to clarify the phenomenon induced by many factors and realize single-chip integration technology. This research will shed light on the miniaturization, long-life and anti-overload of the fuze in execution level, and provide the key technology for further development of the MEMS-CMOS integrated technology.

英文关键词： intelligent fuze;execution circuit;micro-electromechanical systems;complementary metal-oxide-semiconductor transistor;integration modules