三维集成高密度阻变存储器基础研究

项目名称： 三维集成高密度阻变存储器基础研究

项目编号： No.61274091

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 无线电电子学、电信技术

项目作者： 龙世兵

作者单位： 中国科学院微电子研究所

项目金额： 91万元

中文摘要： 阻变存储器（RRAM）由于其结构简单、速度快、功耗低、可三维集成等优点而成为目前新型非挥发存储器的研究重点。本项目面向RRAM的三维集成高密度存储应用，重点研究1T1R和1D1R集成结构的制备、测试表征、转变与失效机理。研究基于金属氧化物材料的高性能肖特基二极管的设计和制备、基于掺杂的二元金属氧化物阻变材料的自整流RRAM器件的设计和制备、1T1R和1D1R集成结构及交叉阵列的的集成工艺、1T1R和1D1R及1R结构的统计测试和表征。研究清楚相关的物理问题如RRAM产生自整流效应的物理根源等，明确不同电极材料的RRAM器件的阻变和失效机理，构建1T1R和1D1R结构中RRAM器件转变参数和可靠性参数的统计模型，建立RRAM的可靠性研究方法。本项目的研究将为RRAM性能的进一步改善与提高提供理论指导，为实现RRAM的高密度三维集成奠定基础，推动我国存储器技术的发展。

中文关键词： 阻变存储器（RRAM）；三维集成；选通器；统计；

英文摘要： Resistive switching memory (RRAM) has been an important candidate for the next-generation nonvolatile memeory, due to its simpel structure, high speed, low power and ease to 3D integration. Aiming at high-density storage application of RRAM through 3D integration, this project will focus on the fabrication, characterization, resistive switching (RS) and failure mechanism of 1T1R and 1D1R structures. We will research the design and fabrication of metal-oxide-based high-performance Schottky diode, the design and fabrication of self-rectifying RRAM cell based on the dopped binary metal oxide, the integration processes of 1T1R, 1D1R structures and crossbar array, the statistical electrical measurement and characterization of 1T1R, 1D1R and 1R structures. We will investigate some physical problems in RRAM such as the physical origin of self-rectifying effect, deepen the physical understanding on the RS and failure mechanism of the RRAM devices with different kinds of electrode materials, construct the physics-based models for the statistics of RS and failure parameters, and establish the framework and methodology for the research on the reliability of RRAM. These research works will provide important guidelines for the improvement of RRAM performances, lay the foundation for the high-density 3D integration of RRAM,

英文关键词： Resistive switching memory (RRAM)；3D integration；Selector；Statistics；