Density functional study of strain effects on the electronic band structure and transport prop- erties of the graphene nanoribbons (GNR) is presented. We apply a uniaxial strain in the x (nearest-neighbor) and y (second nearest-neighbor) directions, related to the deformation of zigzag and armchair edge GNRs (AGNR and ZGNR), respectively. We calculate the quantum conduc- tance and band structures of the GNR using the Wannier function in a strain range from -8% to +8% (minus and plus signs show compression and tensile strain). As strain increases, depending on the AGNR family type, the electrical conductivity changes from an insulator to a conductor. This is accompanied by a variation in the electron and hole effective masses. The compression x direction strain in ZGNR shifts some bands to below the Fermi level (Ef ) and the quantum conductance does not change, but the tensile x direction strain causes an increase in the quantum conductance to 10e2/h near the Ef . For transverse direction, it is very sensitive to strain and the tensile y direction strain causes an increase in the conductance while the compressive y direction strain decreases the conductance at first but increases later.
翻译:演示了关于对电子波段结构和运输螺旋体(GNR)的强度效应的密度功能性研究。我们在x(近邻)和y(第二近邻)方向上应用了一种非轴线菌株,分别与zigzag和臂椅边缘GNR(AGNR和ZGNR)的变形有关。我们用Wannier函数计算GNR的量度-调控和波段结构在-8%至+8%的线段(最小值和加信号显示压缩和抗拉菌株)之间。我们用AGNR的家族类型将压力增加,同时将电磁带和臂椅边缘GNR(AGNR和ZGNR)的电导变异。ZGNR的压缩x方向将一些波带移到Fermi级别以下(Ef)和量导导不会变化,但抗拉力x压力导致量导导向增加,但使量向量增加,但向向下拉力增加至抗变变,而使弹性度向后的抗力和性变弱变。