The higher speed, scalability and parallelism offered by ReRAM crossbar arrays foster development of ReRAM-based next generation AI accelerators. At the same time, sensitivity of ReRAM to temperature variations decreases R_on/Roff ratio and negatively affects the achieved accuracy and reliability of the hardware. Various works on temperature-aware optimization and remapping in ReRAM crossbar arrays reported up to 58\% improvement in accuracy and 2.39$\times$ ReRAM lifetime enhancement. This paper classifies the challenges caused by thermal heat, starting from constraints in ReRAM cells' dimensions and characteristics to their placement in the architecture. In addition, it reviews available solutions designed to mitigate the impact of these challenges, including emerging temperature-resilient DNN training methods. Our work also provides a summary of the techniques and their advantages and limitations.
翻译:ReRAM跨条阵列提供的更高速度、可缩放性和平行性促进了基于RRAM的下一代AI加速器的发展。同时,ReRAM对温度变化的敏感度降低了Ron/Roff比率,对硬件的准确性和可靠性产生了负面影响。 ReRAM交叉条阵列的温度意识优化和重新绘图工作报告,其精确度提高了58 ⁇ ,ReRAM寿命提高2.39美元。本文对热热造成的挑战进行了分类,从ReRAM细胞的尺寸和特点的制约到将其安置在建筑中。此外,它审查了旨在减轻这些挑战影响的现有解决办法,包括新出现的温度弹性 DNNN培训方法。我们的工作还概述了这些技术及其优势和局限性。