项目名称: 微观纳米尺度Au掺杂P型碲镉汞薄膜材料形成机理
项目编号: No.11304335
项目类型: 青年科学基金项目
立项/批准年度: 2014
项目学科: 数理科学和化学
项目作者: 王仍
作者单位: 中国科学院上海技术物理研究所
项目金额: 27万元
中文摘要: 本项目拟利用低成本、结构简单的气相外延方法,研究Au纳米颗粒掺杂P型HgCdTe薄膜材料的形成机理,以及Au激活的关键因素。利用多段控温设备,分别控制Hg源和生长区温度,在一套外延系统内即可实现生长与退火。通过高、低温原位退火调整材料电学参数,控制材料缺陷,减少由于非原位退火造成的薄膜材料表面缺陷和污染;利用第一性原理分析富Hg条件下气相生长p型Au掺杂HgCdTe材料的形成机制,研究气相生长条件下不同尺度纳米Au在HgCdTe材料中的成键机制和电子结构;利用有限元分析方法对HgCdTe气相外延生长过程进行计算机仿真模拟,优化生长、退火参数;研究微观纳米尺度金掺杂的物理机制;通过理论、实验相结合,实现高品质电学参数的p型HgCdTe薄膜材料生长。本项目可为我国红外探测器提供材料基础,切实解决材料中的关键科学问题,为实现HgCdTe红外探测材料的民用化打下实验和理论基础。
中文关键词: 金掺杂;碲镉汞;气相外延;第一性 原理;二次离子质谱
英文摘要: In this project, the vapor phase epitaxial method with advantages of simple and low-cost will be used to grow HgCdTe infrared materials. The formation and activation mechanism of p-HgCdTe film materials doped with Au nanoparticle will be studied by using the vapor deposition furnace which can control the temperature of Hg source areas and epitaxial areas respectively.The growth and annealing process can be achieved within one epitaxial system as well. The pressure of growth chamber can be precisely controlled by adjusting the mercury source temperature. Meanwhile, this process can reduce the mercury vacancy effectively. The electrical parameters of the materials will be adjusted by two-temperature areas in situ annealing, which can influence the defect distribution of the material, and reduce the surface defects and contamination of the materials that caused by non-situ annealing. In order to optimize the parameters of growth and annealing process, First-principles calculations and Finite Element Analysis will be used to simulate the vapor phase epitaxial growth process of HgCdTe to explorethe physical mechanisms of atomic-scale doping. This project can offer guidance to esolve the key scientific problems of the infrared material. Moreover, it can provide the experimental and theoretical basis for civilian use o
英文关键词: Au doped;MCT;VPE;First-principle;SIMS