在SiC衬底上原位生长石墨烯的PN结及其特性研究

项目名称： 在SiC衬底上原位生长石墨烯的PN结及其特性研究

项目编号： No.51472265

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 一般工业技术

项目作者： 郭丽伟

作者单位： 中国科学院物理研究所

项目金额： 80万元

中文摘要： 石墨烯PN结展现出新奇的物理现象和诱人的应用前景，使其成为当前研究的热点。然而，现有石墨烯PN结的制备方法或多或少有一定的局限性。完善现有石墨烯PN结制备技术和探索新的制备方法是实现石墨烯PN结应用的基础和方向。而探索在绝缘衬底上原位、可控制备石墨烯的PN结和有效调控PN结的掺杂浓度是实现石墨烯双极器件应用的首选方向。本课题首创了一种原位在SiC衬底上生长石墨烯PN结的方法。通过离子注入对SiC衬底进行图形化的掺杂调控，并采用高温热分解方法原位外延生长石墨烯, 从而实现SiC上石墨烯载流子极性和浓度在空间上的调控，并制备出石墨烯PN结或周期结构。通过对石墨烯PN结输运性能和光探测性能的评估，揭示影响石墨烯PN结性能的关键参数，为提高石墨烯PN结制备水平提供理论指导。该技术与现代半导体器件工艺技术兼容，有望发展出原位、规模化制备石墨烯PN结的新技术，为石墨烯新型功能器件的探索和应用奠定基础。

中文关键词： 石墨烯；可控制备；功能材料

英文摘要： In recent years, graphene p-n junction exhibits novel physical phenomena and potential application, which makes it become a hot topic of research on graphene. However, the existing preparation methods for graphene p-n junction have more or less some limitations. So, improving the existing method and exploring new technology is a base to realize application of graphene p-n junction. However, exploring a controllable in situ preparation of graphene p-n junction on an insulating substrate with adjustable doping concentration in a p-n junction is a prefer step towards application of graphene bipolar device. Here we explore pioneered method of in situ fabrication of graphene p-n junction on a SiC substrate. Through adjusting doping concentration of a patterned SiC substrate by ion implantation, together with an epitaxial growth of graphene on it by thermal decomposition of SiC, it is expected to control carrier polarity and concentration in graphene and to fabricate graphene p-n junction or periodic structure with expected carrier concentration. The study on transport properties and assessment on detection performance on light from a graphene p-n junction will reveal the key parameters affecting characteristics of graphene p-n junction, which will be helpful to improving the technology for graphene p-n junction. In addition, the technology developed here is compatible with modern semiconductor device procedure and is expected to be an in situ preparation method for graphene p-n junction in large scale, which is significat for realizing application of graphene p-n junction and exploring new functional devices of graphene.

英文关键词： graphene;controllable fabrication;functional materials