氮化铝薄膜制备及过渡金属元素掺杂研究

项目名称： 氮化铝薄膜制备及过渡金属元素掺杂研究

项目编号： No.10864004

项目类型： 地区科学基金项目

立项/批准年度： 2009

项目学科： 金属学与金属工艺

项目作者： 吴荣

作者单位： 新疆大学

项目金额： 26万元

中文摘要： AlN基稀磁半导体材料兼具磁性和半导体属性，在光、电、磁功能集成等新型器件方面具有广阔的应用前景。项目研究了过渡金属元素Ni掺杂AlN室温稀磁半导体薄膜的生长方法、结构和磁性；经过系统性的制备和比较Mn掺杂AlN基纳米线，纳米带和纳米棒阵列的物相结构和室温铁磁性的来源，进一步认识磁性元素掺杂如何形成铁磁序；半导体本身能实现铁磁性，这将是对自旋电子学的一个扩展，以非磁性元素Si掺杂获得了高居里点、宽带隙AlN稀磁半导体材料，证实了样品磁性是材料的本征属性，缺陷在引起Si掺杂AlN薄膜的铁磁性上扮演着重要的角色。通过磁性元素和非磁性元素掺杂和缺陷诱导铁磁性的研究，形成AlN基薄膜和纳米结构稀磁半导体的生长方法；通过微结构、组份、光学、磁学等性质分析，研究物相结构和磁性来源，揭示了掺杂和缺陷导致的AlN基材料稀磁性的规律，为稀磁半导体的应用提供有价值的基础数据和其在自旋光电子器件中的应用奠定基础。

中文关键词： AlN；稀磁半导体；掺杂；缺陷

英文摘要： AlN based diluted magnetic semiconductors (DMSs), combining the properties of both magnetic materials and semiconductors, have many potential applications for optical, electronic and magnetic devices. The project studied on the growth，structural and magnetic properties of Ni doped AlN DMSs. Systematic studies on structures and room-temperature(RT) ferromagnetism in Mn-doped AlN nanorods, nanobelts and arrays clarified magnetic element effects. It is a great expansion for spintronics that semiconductor may realize ferromagnetic by itself. High Curie temperature (Tc) and wide banggap Si-doped AlN DMSs proved that RT ferromagnetism is an intrinsic property of the samples and defects had great contribution for ferromagnetism order. Investigations on magnetic and non-magnetic elements doping and defects induced ferromagnetism and micro-structure,composition,optical, magnetic properties of AlN films or nanostructures revealed relationship between DMMs properties and doping elements and defects. It is expected that our ?ndings to provide significative information for related experiment and offer experimental data for development of new DMSs and spintronics device.

英文关键词： AlN; diluted magnetic semiconductors; doping; defect