掺杂3d离子稀磁半导体微结构及磁光性能研究

项目名称： 掺杂3d离子稀磁半导体微结构及磁光性能研究

项目编号： No.11204121

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 物理学I

项目作者： 谭晓明

作者单位： 鲁东大学

项目金额： 25万元

中文摘要： 稀磁半导体材料在自旋电子学及微电子学等领域展现出非常广阔的应用前景，本项目以Ga1-xMnxN、Ga1-xMnxAs、Zn1-xCoxO、Zn1-xCrxTe等稀磁半导体为研究对象，旨在利用配位场理论从原子与分子物理学的角度建立合适的分析掺杂3d过渡金属离子稀磁半导体的磁性、微结构及光性能的半经典理论模型。研究内容主要包括掺杂3d过渡金属离子稀磁半导体材料的磁性，对其磁化强度、磁化率和磁比热等进行数值计算；光吸收谱的计算，主要计算其d-d吸收光谱并对实验上测得的光吸收谱进行理论上的识别；掺杂后的微结构及光性能与微结构变化的关系，提出确定掺杂3d过渡金属离子稀磁半导体材料局域微结构的理论方案，对光性能与微结构变化的关系进行数值计算，以探讨特定条件下稀磁半导体光性能的变化规律。本项目的研究不仅可以推广完善配位场理论的应用范围，而且具有重要的现实意义。

中文关键词： 稀磁半导体；配位场；微结构；电子特性；

英文摘要： Diluted magnetic semiconductors show a very broad application prospects in the spin electronics and micro-electronics. The project takes the diluted magnetic semiconductors of Ga1-xMnxN, Ga1-xMnxAs, Zn1-xCoxO and Zn1-xCrxTe as the research objects, and aims to establish the semi-empirical theoretical model for analyzing the magnetism, microstructure and optical properties of the diluted magnetic semiconductor doped with 3d transition metal ions from the atomic and molecular physics by use of the ligand field theory. The project consists of the following studies. The magnetism of diluted magnetic semiconductors doped with 3d transition metal ions is studied. The numerical calculations for magnetization intensity, magnetisability and magnetism specific heat will be conducted; The optical absorption spectra are calculated. The d-d absorption spectra are calculated and the experimental d-d spectra are identified; The microstructure and the relation between the microstructure and the optical property are studied. The theoretical scheme is presented for computing the microstructure of the diluted magnetic semiconductors doped with 3d ions and the numerical calculations for the relaions between the microstructure and the optical property are conducted. The variational law of the optical property under especial conditi

英文关键词： diluted magnetic semiconductor；ligand field；microstructure；electronic property；