基于Pt/TiO2-x/TiO2/TiO2+x/Pt结构忆阻器的新型非易失性存储器电路设计与实现

项目名称： 基于Pt/TiO2-x/TiO2/TiO2+x/Pt结构忆阻器的新型非易失性存储器电路设计与实现

项目编号： No.61204132

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 信息四处

项目作者： 李志远

作者单位： 黑龙江大学

项目金额： 27万元

中文摘要： 忆阻器是一种新型的非线性电阻元件。由于其具有非易失性、纳米尺度和三维堆叠等特性，在实现非易失性存储器方面具有巨大的应用前景。本项目拟依托于申请者所在课题组前期工作中提出的Pt/TiO2-x/TiO2/TiO2+x/Pt结构忆阻器，研究基于该结构忆阻器的新型非易失性存储器电路设计与实现的科学问题。采用基于量子机制的第一性原理方法对忆阻器的微观工作机理进行深入研究。揭示忆阻器内氧空位和氧离子的浓度及分布梯度、纳米膜厚度、铂纳米线交叉点面积、外加电压等因素对忆阻器电阻率和开关速度等宏观特性的影响规律。在此基础上，建立便于集成电路设计的忆阻器SPICE模型。采用不同尺寸的铂纳米线与忆阻器组合，设计仅包含铂纳米线和忆阻器元件的存储器电路。最终通过磁控溅射镀膜和电子束曝光等技术制备新型非易失性存储阵列的原型芯片。该项研究将为打破国际专利壁垒，使我国掌握具有自主知识产权的下一代信息存储技术提供技术储备。

中文关键词： 忆阻器；工作机理；模型；电路设计与制备；非易失性存储器

英文摘要： Memristor is a novel nonlinear resistance. Its unique characteristics of nonvolatile, nanoscale and three-dimensional stack have made the memristor open up new possibilities in the development of the nonvolatile memories. This study mainly focuses on the circuit design and fabrication for a novel nonvolatile memory using memristors with Pt/TiO2-x/TiO2/TiO2+x/Pt structure, which was proposed by our group in the previous work. Firstly, we will investigate the micro-switching mechanism for the memristor with Pt/TiO2-x/TiO2/TiO2+x/Pt structure from the quantum level using the first principles method. And we will explore the effects of the physical parameters of the memristor on its performance such as the resistivity and switching speed and so on, in which physical parameters include the concentration and distribution of oxygen cavities and oxygen ions, the thickness of nano-films, the cross point areas of Pt nanowires, and applied voltage, etc. Based on above analysis, SPICE model of the memristor suited for integrated circuit design will be built. Moreover, the nonvolatile memory circuit including memory array and peripheral circuit will be entirely designed by the combination of different sizes Pt nanowires and memristors. Finally, the chip for a nonvolatile memory array will be prepared by magnetron sputter plat

英文关键词： memristor；switching mechanism；modeling；circuit design and fabrication；nonvolatile memory