基于光调控的有机场效应晶体管非易失性存储器的研究

项目名称： 基于光调控的有机场效应晶体管非易失性存储器的研究

项目编号： No.61475074

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 无线电电子学、电信技术

项目作者： 仪明东

作者单位： 南京邮电大学

项目金额： 84万元

中文摘要： 基于光调控的有机场效应晶体管非易失性存储器是一种利用光照作为信息写入和擦除手段的新型存储器，这种存储器具有存储密度高、存储速度快、数据安全性高、对电力依赖性低等诸多优点，拥有良好的开发前景和应用价值。目前基于光调控的有机场效应晶体管非易失性存储器的研究在国际上刚刚起步，主要存在着存储性能低且机理阐释不清等问题，制约了它的实际应用。为解决以上问题，本项目提出利用有机半导体异质结作为光子感应层，对电荷存储层薄膜表面形貌进行阵列化处理及厚度优化，采用高介电常数的交联聚合物作为栅绝缘层等方法，重点降低光调控的有机场效应晶体管非易失性存储器的操作电压和延长其存储的维持时间以及读写擦循环次数。并根据相关光电性能参数的实验表征和数据分析，构建合理的存储模型，最终研制出高性能的光调控的有机场效应晶体管非易失性存储器，从而为研制下一代的存储器提供技术储备。

中文关键词： 有机场效应晶体管；有机半导体；存储器；光调控

英文摘要： Light-activated organic field-effect transistors non-volatile memory devices (OFETNVMs), which utilize light irradiation as an approach to program or erase data, are considered to have a promising development prospect and practical application value as a new kind of memory devices owing to the advantages of high density, fast switching, good data security and low dependence on electricity. Currently, the research on the light-activated OFETNVMs is still in an early state, and the practical application of this type of memory devices is mainly restricted by their low memory performance, as well as their paradoxical working mechanism.To solve the problems above, we will focus on reducing the operating voltage of light-activated OFETNVMs and improving the retention time and program/erase cycles by various methods, such as utilizing organic semiconductor heterostructure as light-induced layer, constructing array process to the surface morphology of charge-trapping layer and optimizing the thickness, as well as employing cross-linked polymer with high dielectric constant as the dielectric insulator, and so on. Meanwhile, we will construct a rational memory model according to the experimental characterization and data analysis of the relevant electrical characteristics, and eventually develop high-performance light-activated OFETNVMs. The above study can provide technical reserves for developing the next generation memory devices.

英文关键词： organic field-effect transistors;organic semiconductors;memory;light-activated