基于金属/氧化物异质结的阻变稳定性能及其机制研究

项目名称： 基于金属/氧化物异质结的阻变稳定性能及其机制研究

项目编号： No.51301084

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 一般工业技术

项目作者： 颜志波

作者单位： 南京大学

项目金额： 25万元

中文摘要： 金属/氧化物异质结是金属功能材料和器件物理研究的热点课题之一。金属/氧化物异质结非易失性阻变器件具有多态存储能力、稳定性能较好，因此，开展相关研究对推进阻变存储器实用化进程具有重要意义。本项目选择以金属/掺杂钛酸锶氧化物异质结为主要研究对象，关注发展提高阻变性能稳定性的物理方法。通过采用多种金属/氧化物异质结制备技术与界面处理手段，实现对金属/氧化物异质结界面的空间微结构调控，揭示异质结界面微结构对阻变性能稳定性的重要作用。在此基础上，尝试制备与表征具有阻变效应的金属基异质结量子阱，揭示量子阱的阻变行为。另外还研究最佳"读"和"写"策略，以改善金属/氧化物异质结阻变器件的稳定性能。

中文关键词： 忆阻器；电阻开关；铁电隧道结；金属氧化物异质结；存储器

英文摘要： Metal/oxide heterojunction is a hot topic of research and development in the field of metal functional materials and device physics research. The resistive random access memory (RRAM) device based on metal/oxide heterojunction has the ability of multi-bit storage and the advantage of good stability. Embarking on the related studies is significant for advancing RRAM practical applications. In this proposal, the research objects are mainly based on the Metal/Doped-SrTiO3 heterojunction, and the attention is to develop the methods for improving the stability of resistance switching performance. By using different heterojunction fabrication techniques and interface treatments, the heterojunctions with different interface microstructures will be fabricated, and then the roles of interface microstructure on the stability improvement of resistance switching performance will be studied and revealed. Besides, by trying to fabricate the metal-based quantum-well that having resistive switching behaviors, the roles of quantum-well on the stability improvement of switching performance will be investigated. In addition, the "Read" and "Write" strategies will be investigated to improve the stability of the switching performance of metal/oxide heterojunction.

英文关键词： memristor；resistance switching；ferroelectric tunneling junctions；metal/oxide junction；memory