基于掺杂SiC纳米线的非易失性阻变存储器的组装及性能研究

项目名称： 基于掺杂SiC纳米线的非易失性阻变存储器的组装及性能研究

项目编号： No.51272112

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 一般工业技术

项目作者： 陈友强

作者单位： 青岛大学

项目金额： 80万元

中文摘要： 具有高速度、高密度、低功耗及更高可靠性的下一代非易失性阻变存储器(RRAM)在未来高性能计算机、图像信息处理及数字化控制等领域具有诱人的应用前景。然而如何获得能满足应用要求的RRAM，是一个极具挑战性的课题。本项目拟通过有机前驱体热解工艺参数的精细控制，实现单晶SiC纳米结构的可控掺杂。采用微电子工艺并结合扫描电镜技术制备一种新的，性能优异的 SiC纳米线RRAM。项目将系统表征和评价SiC纳米线RRAM存储单元的阻变特性，分析和揭示纳米线结构、量子限域效应、介电层、掺杂类型、能带结构、界面效应及工艺参数与RRAM性能间的内在关系，阐明SiC纳米线RRAM的工作机理，从而最终揭示决定RRAM性能优异的关键因素和调控途经等科学问题。项目的实施将丰富和发展非易失性存储器基础理论研究，相关工作将为SiC纳米线RRAM的基础研究和器件化提供一定的基础数据和关键技术。

中文关键词： 阻变存储器；非易失性；sic 纳米线；掺杂；

英文摘要： The next generation nonvolatile resistive memory (RRAM) with excellent performances in terms of high-speed, high-density, low power consumption and higher reliability has demonstrated significant potential for future high-performance computers, and image information processing and digital control systems. However, fabrication of such RRAM that can meet the criteria for practical use still remains a challenge to researchers to date. In this project, we will try to realize the growth of controlled doped SiC nanowire(NW) with a single crystalline structure by accurately tailoring organic precursor pyrolysis. The as-prepared doped NWs will then be used as biluding blocks to construct a new high-performance nanoscale RRAM devices via the bottom-up strategy combined with microelectronics and scanning electron microscope technologies. Then the obtained RRAM will be systematically characterized to evaluate the resistance switching behavior in its memory cells . Specifically, we will deeply analyze the experimental results to reveal the intrinsic relationship between the device performance and various factors including the nanowire structure, quantum confinement effects, the dielectric layer, doping types, band structure, interficial effects as well as processing parameters, with the emphasis on the classification of

英文关键词： resistive memory；nonvolatile；sic nanowires；doping；