We report a versatile and cost-effective way of controlling the unsaturated loss, modulation depth and saturation fluence of graphene-based saturable absorbers (GSAs), by changing the thickness of a spacer between SLG and a high-reflection mirror. This allows us to modulate the electric field intensity enhancement at the GSA from 0 up to 400%, due to the interference of incident and reflected light at the mirror. The unsaturated loss of the SLG-mirror-assembly can be reduced to$\sim$0. We use this to mode-lock a VECSEL from 935 to 981nm. This approach can be applied to integrate SLG into various optical components, such as output coupler mirrors, dispersive mirrors, dielectric coatings on gain materials. Conversely, it can also be used to increase absorption (up to 10%) in various graphene based photonics and optoelectronics devices, such as photodetectors.
翻译:我们通过改变SLG和高反射镜之间的空间器厚度,报告了一种多功能和成本效益高的方法,以控制基于图形的可探测吸收器(GSAs)的不饱和损失、调制深度和饱和度,将SLG和高反射镜之间的空间器厚度加以改变。这使我们能够将GSA的电场强度增强从0调制为400 %,因为事件干扰和镜子反射光线。SLG-mirror组装的不饱和损失可降至0.00美元。我们用这个方法将VECSEL从935至981nm用于模式锁入VECSEL。这个方法可用于将SLG纳入各种光学部件,例如输出镜、分散镜、电场涂层在增益材料上。相反,它也可以用来增加基于图形的光学和光学设备中的吸收(高达10%),例如光探测器。