三维电子封装关键结构-TSV的微观与宏观力学行为研究

项目名称： 三维电子封装关键结构-TSV的微观与宏观力学行为研究

项目编号： No.11272018

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 数理科学和化学

项目作者： 秦飞

作者单位： 北京工业大学

项目金额： 86万元

中文摘要： 针对下一代三维封装技术的关键结构单元-硅通孔（TSV），采用实验、理论分析和数值模拟方法，研究TSV结构的微观-宏观力学行为，建立其分析模型。主要研究内容为：发展一种TSV-Cu残余应力测试方法，研究电镀工艺条件与残余应力的关系，建立残余应力预测模型；研究TSV-Cu的微观力学行为，并建立宏观计算模型；实验研究TSV-Cu/Ta/SiO2/Si界面失效模式，建立界面力学行为的微观和宏观模型，提出界面完整性评价指标和方法；研究TSV-Cu和TSV界面在工艺条件和服役条件下的变形机制，提出TSV-Cu的胀出量/缩进量计算模型；将上述成果集成应用于TSV转接板的热机械可靠性分析。研究目标为：给出TSV结构在主要工艺和服役条件下力学行为的清晰图像，为TSV工艺改进提供依据，为三维TSV封装技术的热机械可靠性设计提供工程化分析模型和工具，为TSV转接板封装产品的热机械可靠性设计提供建议。

中文关键词： 硅通孔；力学行为；微结构；界面；可靠性

英文摘要： Through-Silicon Via (TSV) is the key structural unit in the next generation three dimensional packaging technology. Micro- and macro-mechanical behaviors of the TSV are investigated in this project by experimental, theoretical and numerical methods. In the project, a new technique to measure the residual stress in TSV-Cu and a model to predict the residual stress in various electro-plating processes are developed. Micro-mechanical behaviors of the TSV-Cu are investigated,and an approach able to simulate its grain-scale mechanical behaviors is developed, and macro-mechanical models of the TSV-Cu are proposed finally. Failure modes of the TSV-Cu/Ta/SiO2/Si interface under various process and temperature conditions are investigated experimentally, then based on the experimental observations, models to predict micro- and macro-mechanical behaviors of the interface are proposed, and a set of criteria to assess the integration of the TSV interface is established. Deformation mechanism in the TSV is investigated under various temperature conditions, and a model to predict the protrusion/intrusion of the TSV-Cu is proposed. The models and methods derived are applied to carry out reliability analysis of a TSV interposer. Objectives of this project are to provide a clear picture of the micro- and macro-mechanical behavior

英文关键词： Through silicon via (TSV)；Mechanical behavior；Microstructure；Interface；Reliability