外延BaTiO3薄膜的导电性能调控及电荷输运机制研究

项目名称： 外延BaTiO3薄膜的导电性能调控及电荷输运机制研究

项目编号： No.51472093

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 一般工业技术

项目作者： 陆旭兵

作者单位： 华南师范大学

项目金额： 83万元

中文摘要： 对传统绝缘铁电氧化物的导电和电荷输运行为的研究，是当前铁电材料研究领域中具有丰富物理内涵和广泛应用前景的前沿课题。学术界对具有理想原子化学配比的绝缘钛酸钡(BaTiO3) (BTO)的铁电和介电特性已进行了系统研究，而对BTO薄膜的导电行为及电荷输运机制的认识还有待深入。项目拟对外延BTO薄膜的导电行为进行调控，揭示影响BTO薄膜导电行为的电荷输运机制。主要研究内容包括:1) 外延BTO薄膜的高质量生长及微结构表征；2) BTO薄膜中的物理(微结构缺陷)和化学缺陷（杂质离子、氧空位和阳离子空位）对其导电性能和电荷输运机制的影响；3）铁电极化对BTO薄膜的导电和电荷输运的影响机制。本项目将实现BTO薄膜在绝缘体-半导体-金属导电性能间的可靠调控；系统阐释BTO薄膜的电荷输运行为，揭示影响导电BTO薄膜电荷输运的微观物理机制，为拓展BTO薄膜在新型阻变和光伏能源器件中的应用提供理论和实验积累。

中文关键词： 铁电材料；氧化物薄膜；导电机理；电阻率

英文摘要： The study on the conductivity and charge transport behaviors of the traditional insulating ferroelectric oxides is a cutting edge research topic in the ferroelectric materials community. For the stoichiometric BaTiO3 (BTO), lots of research works have been carried out on its ferroelectric and dielectric properties. However, the work related to the BTO films' conductivity behavior and their corresponding charge transport mechanisms are very rare and not well understood. In this project, we will study how to modulate the conductivity of the BTO film and reveal the charge transport mechanisms embedded in its conductivity behaviors. The main research work will be done as follows: 1) Growth and microstructure characterization of high-quality epitaxial BTO film. 2) Impact of the physical defects (structural defects) and chemical defects (impurities, oxygen vacancy, cation vacancy) on the conductivity and charge transport behaviors of BTO film. 3)Impact of ferroelectric polarization on the conductivity and charge transport behaviors of BTO film. This project will realize the reliable modulation of the BTO films' conductivity among insulator-semiconductor-metallic transport. The charge transport behaviors of BTO films will be well demonstrated, and the physical mechanisms embedded in the charge transport behaviors of conductive BTO film will be revealed.Our work will provide useful theoretical and experimental results for BTO films' applications in novel resistive switcing memory and optoelectronic devices.

英文关键词： ferroelectric materials;oxide film;conduction mechanism;resistivity