β- Ga2O3氧化物半导体单晶的生长与导电性能的研究

项目名称： β- Ga2O3氧化物半导体单晶的生长与导电性能的研究

项目编号： No.91333106

项目类型： 重大研究计划

立项/批准年度： 2014

项目学科： 无线电电子学、电信技术

项目作者： 徐军

作者单位： 中国科学院上海硅酸盐研究所

项目金额： 91万元

中文摘要： β-Ga2O3是一种宽带隙氧化物半导体材料。2013年1月，日本科学家率先在β-Ga2O3单晶衬底上研制出的GaN基LED器件实现在大驱动电流1200mA下光输出功率达蓝宝石基板器件的5倍以上，并且热阻仅是蓝宝石基的1/10～1/100，引起国内外对β-Ga2O3的广泛关注。作为GaN衬底，β-Ga2O3单晶集三大衬底之优点：结合了与GaN晶格零失配、SiC导电性和蓝宝石透光性。 本项目提出采用EFG法生长2英寸β-Ga2O3晶体，利用计算机数值模拟CGSim软件对EFG法的温场、坩埚、模具进行自主设计；通过离子掺杂、生长气氛调控、后退火处理等途径提高β-Ga2O3单晶的导电性能。力争突破2英寸衬底级β-Ga2O3晶体生长的关键技术，推动我国Ga2O3基大功率白光LED、紫外LED、LD和β-Ga2O3晶体管等器件的发展。

中文关键词： 氧化物半导体；晶体生长；β-氧化镓；电学性能；

英文摘要： β-Ga2O3 is an oxide semiconductor material with wide band gap. In January 2013, Japanese researchers developed the GaN-LED devices on β-Ga2O3 substrate whose optical output power was more than five times than that of devices made on sapphire substrate at 1200mA driving current and the thermal resistance was 1/10～1/100 of that on sapphire substrate. These progresses attract extensive attentions in the world. As the substrate material for GaN epitaxy, β-Ga2O3 single crystal has the advantages of three main substrates: a combination of 0% lattice mismatch with GaN, the conductivity of SiC and light transmittance of sapphire. This project proposed that 2″ β-Ga2O3 single crystals were grown using Edge-defined film-fed growth (EFG). The temperature field, crucible and mould were self-designed using computer numerical simulation CGSim software. The conductivity of β-Ga2O3 single crystal was improved by icon doping, growth atmosphere controlling, annealing treatment, and etc. The key growth technology of 2″ β-Ga2O3 single crystal with substrate grade was strive to break through, which will promote the development of Chinese Ga2O3 based high-power white LED, UV LED , LD , β-Ga2O3 transistors and other devices.

英文关键词： Oxide semiconductor；Crystal growth；β-Ga2O3；Electrical performance；