原子级平整、低位错密度AlN和高Al组分AlGaN的MOCVD外延生长动力学和缺陷控制研究

项目名称： 原子级平整、低位错密度AlN和高Al组分AlGaN的MOCVD外延生长动力学和缺陷控制研究

项目编号： No.61474002

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 无线电电子学、电信技术

项目作者： 许福军

作者单位： 北京大学

项目金额： 86万元

中文摘要： Al组分大于40%的高Al组分AlGaN是制备深紫外发光和探测器件不可替代的半导体体系，其高质量外延材料的获得是实现高性能器件的基础和关键。本申请项目以制备高质量AlN和AlGaN外延薄膜所需要的MOCVD二维生长模式和多面控制生长模式的有效实现为关键科学问题，采用不同倾角衬底结合高温下脉冲原子沉积、多周期大温差高低温生长模式调控、部分氮化控制不同区域纵向生长速度差等富有特色的创新技术路线，系统开展AlN和AlGaN的MOCVD外延生长研究，制备出表面原子级平整、低位错密度的AlN和高Al组分 AlGaN外延薄膜，并掌握其生长动力学和缺陷控制规律，为AlGaN基高性能紫外光电器件的研制提供科学依据和解决方案。本项目申请人及所在课题组近年来主要从事氮化物半导体及其低维量子结构的外延生长和物性研究，具备良好的工作基础和条件。本项目研究内容处于当前国际氮化物半导体研究的前沿领域。

中文关键词： 氮化铝；半导体；单晶生长

英文摘要： High-Al-content AlGaN (greater than 40%) is the irreplaceable semiconductor system for deep ultraviolet light-emitting devices and detectors, and realizing epitaxial growth of the high-quality epilayer is the basis and key for high-performance devices. Aiming at the key scientific problems of realizing the pre-requisite two-dimensional growth mode and faceted growth control in MOCVD for high-quality AlN and AlGaN epilayer, this requested item adopts some distinctive innovative technical routes, including high temperature pulse atomic deposition on substrate with different miscut angles, multicycle high- and low- temperature growth in turn with large temperature difference, controlled difference for vertical growth speed at different zones induced by partially nitridation technique. Using these technical routes, systematically studies for AlN and AlGaN growth will be carried out to obtain high quality AlN and high-Al-content AlGaN films with atomic level flatness and low dislocation density and to grasp the growth dynamics and defect control law, providing scientific basis and solutions for AlGaN-based high-performance ultraviolet optoelectronic devices. In the recent years, the research group involving the item applicants has been engaged in growth of III-nitide semiconductors and low-dimensional quantum structures as well as study of the related physical properties, and has established very good working foundation and experimental conditions. The contents of this requested item are at the reseach forefront of III-nitide semiconductors.

英文关键词： AlN;semiconductor;single crystal growth