记忆元件建模与记忆电路动力学研究

项目名称： 记忆元件建模与记忆电路动力学研究

项目编号： No.51277017

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 电工技术

项目作者： 包伯成

作者单位： 常州大学

项目金额： 80万元

中文摘要： 忆阻器是具有记忆特性的非线性电阻器，是物理上新实现的第四种基本二端无源电路元件。由忆阻器、忆容器和忆感器组成的记忆电路元件（简称记忆元件），是电路理论中全新的基础元件，在计算机科学、神经网络、电子工程、通信工程等领域有着广泛的理论物理意义和工程应用价值。本项目围绕记忆元件与记忆混沌电路，着重开展以下三个方面的研究工作：提出新的记忆元件数学模型，进行记忆元件伏安特性分析、基本电路仿真，并开展相应模型的等效电路实现与电路实验的研究，建立记忆元件及其应用的基础电路理论；进行基于记忆元件的电路综合设计，利用混沌动力学理论，对记忆电路进行动力学建模，揭示记忆电路所产生的特殊非线性物理现象及其形成机理，以及进行混沌镇定控制与混沌脉冲同步的研究；进行记忆电路即记忆系统的稳定性分析，估计记忆元件初始状态和系统参数的稳定性范围，初步建立记忆系统平衡点集稳定性理论。

中文关键词： 忆阻；忆阻电路；动力学分析；稳定性；硬件实验

英文摘要： Memristor, a nonlinear resistor with memory property realized physically recently, is the fourth basic passive two-terminal circuit element. Memory circuit elements, including memristor, memcapacitor and meminductor, are brand new fundamental elements in circuit theory. They have potential theoretical and engineering application significance in the fields of computer science, neural network, electronic engineering, communication engineering, and etc. In this project, by focusing on modeling and equivalent realization of memory elements and dynamical analysis of memory chaotic circuits, the following three aspects of research works will be investigated: a) To propose new mathematical models of memory elements, upon which the voltage-current characteristic analyses, and basic circuit simulations will be formulated, and the equivalent circuit realizations and circuit experiments corresponding to the models will be studied, and then the fundamental circuit theory for memory elements and their application will be built; b) memory elements based circuits will be designed synthetically, and by using chaotic dynamics theory, dynamical modeling of memory circuits will be conducted, upon which the special nonlinear physical phenomena and their corresponding forming mechanism generated by the memory circuits will be reveal

英文关键词： Memristor；memristive circuit；dynamical analysis；stability；hardware experiment