We provide an overview of recent developments and future directions in the RowHammer vulnerability that plagues modern DRAM (Dynamic Random Memory Access) chips, which are used in almost all computing systems as main memory. RowHammer is the phenomenon in which repeatedly accessing a row in a real DRAM chip causes bitflips (i.e., data corruption) in physically nearby rows. This phenomenon leads to a serious and widespread system security vulnerability, as many works since the original RowHammer paper in 2014 have shown. Recent analysis of the RowHammer phenomenon reveals that the problem is getting much worse as DRAM technology scaling continues: newer DRAM chips are fundamentally more vulnerable to RowHammer at the device and circuit levels. Deeper analysis of RowHammer shows that there are many dimensions to the problem as the vulnerability is sensitive to many variables, including environmental conditions (temperature \& voltage), process variation, stored data patterns, as well as memory access patterns and memory control policies. As such, it has proven difficult to devise fully-secure and very efficient (i.e., low-overhead in performance, energy, area) protection mechanisms against RowHammer and attempts made by DRAM manufacturers have been shown to lack security guarantees. After reviewing various recent developments in exploiting, understanding, and mitigating RowHammer, we discuss future directions that we believe are critical for solving the RowHammer problem. We argue for two major directions to amplify research and development efforts in: 1) building a much deeper understanding of the problem and its many dimensions, in both cutting-edge DRAM chips and computing systems deployed in the field, and 2) the design and development of extremely efficient and fully-secure solutions via system-memory cooperation.
翻译:我们概述了Row Hammer脆弱性的最新动态和未来方向,这些动态和未来方向困扰着现代DRAM(动态内存存存存存)芯片,几乎所有计算机系统都将其用作主要记忆。RowHammer是一个现象,它反复在真实的DRAM芯片中访问一行,造成周围各行的位翻(即数据腐败),这种现象导致系统安全脆弱性严重和广泛,自2014年最初的Row Hammer论文以来,许多工作都表明,RowHammer现象表明,随着DRAM技术的不断升级,问题正在变得更加严重恶化:新的DRAM芯片在装置和电路上基本上更容易被Row Hammmer系统所利用。对RowHammer的深度分析表明,问题有许多层面,因为对许多变量都十分敏感(即动态)、流程变异、存储数据模式以及记忆存取模式和记忆控制政策。因此,事实证明,随着DHammermermer现象的不断升级和高效化,问题正在变得越来越严重:新的DRAM芯、能源、区域对RW的深度操作和后安全动态的深度理解,我们从设计中开始,对未来安全动态的系统进行审视研究。