We have revisited the valence band electronic structure of NiO by means of hard x-ray photoemission spectroscopy (HAXPES) together with theoretical calculations using both the GW method and the local density approximation + dynamical mean-field theory (LDA+DMFT) approaches. The effective impurity problem in DMFT is solved through the exact diagonalization (ED) method. We show that the LDA+DMFT method alone cannot explain all the observed structures in the HAXPES spectra. GW corrections are required for the O bands and Ni-s and p derived states to properly position their binding energies. Our results establish that a combination of the GW and DMFT methods is necessary for correctly describing the electronic structure of NiO in a proper ab-initio framework. We also demonstrate that the inclusion of photoionization cross section is crucial to interpret the HAXPES spectra of NiO.We argue that our conclusions are general and that the here suggested approach is appropriate for any complex transition metal oxide.
翻译:我们通过硬X射线光导光谱分析(HAXPES)重新审视了NiO的值光带电子结构,同时利用GW方法和当地密度近似值+动态平均场理论(LDA+DMFT)方法进行了理论计算。DMFT的有效杂质问题通过精确的对角化(ED)方法得到解决。我们表明,光化加DMFT方法无法单独解释HAXPES光谱中所有观测到的结构。GW对O波段和尼兹以及衍生物国家需要进行校正,以适当定位其装订能量。我们的结果证明,GW和DMFT方法的结合对于正确描述在适当的氨基框架中的NiO电子结构是必要的。我们还表明,纳入光化截面部分对于解释NiO的HAXPES光谱至关重要。我们说,我们的结论是一般性的,这里建议的方法对于任何复杂的过渡性金属氧化物是合适的。