基于ZnO基TFT的AMOLED像素电路研究

项目名称： 基于ZnO基TFT的AMOLED像素电路研究

项目编号： No.61204089

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 信息四处

项目作者： 吴为敬

作者单位： 华南理工大学

项目金额： 28万元

中文摘要： 有源矩阵有机发光二极管显示器（AMOLED）是全固态工艺，具有体积小，自主发光、可视角度大、响应时间短，低功耗等优点，是学术界和产业界的研究热点。如何通过像素电路设计补偿TFT阈值电压漂移和OLED开启电压退化从而提高AMOLED显示均匀性是亟待解决的关键科学问题。本项目在前期研究基础上，计划融合外围驱动电路补偿、预充电、流水线或交流驱动等技术，提高TFT阈值电压锁存速度并延长OLED的工作寿命，争取达到实用化的水平。结合像素电路研究成果，依托华南理工大学新型显示技术研究院国内领先的ZnO 基TFT背板工艺在200mm*200mm玻璃基板上制备5英寸 320*240 AMOLED 绿色屏进行实验验证。其技术指标：显示帧频60Hz，显示均匀性达90％以上，开口率 30％以上，最大亮度 200cd/m^2。

中文关键词： 有源矩阵有机发光二极管；像素电路；氧化锌基薄膜晶体管；；

英文摘要： Active matrix organic light-emitting diode (AMOLED) displays have gained considerable interest in flat panel displays due to the advantages including high brightness, wide viewing angle, low power consumption and fast response time.The TFT backplane is the key technology of AMOLED display. Until now, the types of thin-film transistors can be applied in AMOLED panel are hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs), Low-temperature polycrystalline-silicon thin-film transistors (LTPS TFTs) and ZnO-based TFTs. A-Si:H TFTs are not very suitable for AMOLED displays due to their low mobility. LTPS TFTs have large mobility,while the crystallization process is complicated. ZnO-based TFTs are hopeful to be TFTs of the next generation due to its larger mobility than that of a-Si:H TFTs and simpler fabrication process than that of LTPS TFTs. The well-known two-TFTs one-Capacitor (2T1C) pixel circuit is not suitable for AMOLED displays because the OLED current is nonuniform due to the threshold voltage shift of TFTs. On the other hand, when a certain data voltage is input to the 2T1C pixel circuit, the OLED current will decrease with the increase of its anode potential because the threshold voltage of OLED degrades during operation. So the anode potential of OLED should be considered in the design o

英文关键词： Active matrix organic light-emitting diode；Pixel circuit；ZnO-Based Thin Film Transistors；；