40纳米工艺MOSFET器件毫米波建模和低功耗电路设计

项目名称： 40纳米工艺MOSFET器件毫米波建模和低功耗电路设计

项目编号： No.61474044

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 无线电电子学、电信技术

项目作者： 高建军

作者单位： 华东师范大学

项目金额： 84万元

中文摘要： 器件模型是进行集成电路分析和设计的基础，准确的器件模型对于提高集成电路设计成功率、缩短研制周期非常关键，集成电路设计软件工具的发展与器件模型水平息息相关。申请人一直从事器件建模和高速电路相关研究，已发表相关学术论文80余篇，撰写光电子器件、半导体器件建模与测试技术方面的英文专著2部，中文专著3部。拟将在MOSFET器件建模和高频测试方法等方面已取得的研究基础上，开展基于纳米MOSFET器件的毫米波集成电路设计技术器件建模这一重要领域的基础研究工作。提出将传统等效电路建模技术、物理器件建模技术和微波射频测量技术相结合的建模技术，解决参数提取的唯一性问题和获得符合器件物理含义的模型参数，结合和利用MOSFET毫米波元器件模型的研究与开发成果，研究60GHz毫米波频段低功耗低噪声放大器集成单元电路的设计技术。

中文关键词： 射频集成电路；低功耗；纳米器件；MOSFET；器件建模

英文摘要： The device model is the basis for the analysis and design of integrated circuits, accurate device models are essential to improve the rate of success and shorten the development cycle during the integrated circuit design. The device model is still the core of integrated circuit computer aided design, which the integrated circuit design software is closely related to. Therefore, semiconductor device modeling is one of the indispensable topics to promote integarted circuit computer aided design technology and the construction of information in China. The applicant has been engaged in device modeling for more than 15years. More than 80 research articles, two English monographs and three Chinese monographs have been published. In the following research work, the applicant will insist on the area about device modeling and corresponding testing techniques for nanometer MOSFET.Accurate modeling and parameter extraction of the millimeterwave equivalent circuit model for nanometer MOSFET will be developed in this project. The model is versatile in that it permits dc, small signal, noise and large signal to be performed. Based on conventional equivalent circuit modeling, physical modeling technique and accurate microwave measurement technique, a direct extraction method to determine the extrinsic and intrinsic model parameters, also noise model parameters for HEMT by using a set of closed-form expressions will be proposed.The other fundamental research will be focused on the low-power consumption low noise and power amplifiers design based on the accurate noise and nonlinear MOSFET models.

英文关键词： radio frequency;low power consumption;nm device;MOSFET;Modeling