SiGeC HBT新结构及其关键技术研究

项目名称： SiGeC HBT新结构及其关键技术研究

项目编号： No.61204094

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 信息四处

项目作者： 刘静

作者单位： 西安理工大学

项目金额： 26万元

中文摘要： 项目针对SiGe HBT存在的问题，将替位式C原子引入到异质结晶体管中，对SiGeC HBT关键技术进行深入研究。提出SiGeC HBT新结构，对新结构器件在结构、机理、模型、特性和制作工艺等方面进行综合分析与优化设计；研究分析SiGeC/Si异质结能带结构特点，探索新结构器件电流输运机理；建立精确的SiGeC HBT器件模型、工艺模型，为新器件和工艺的设计提供可靠的模拟仿真手段，并以此为突破口，提取SiGeC HBT优化的结构参数和工艺参数，得到新结构的优化设计方案；探索合适的掺碳工艺和器件工艺条件，制定出简单易行的工艺流程和工艺实施方案。在此基础上，选择一种最佳的器件结构实施方案流片，试制样品并进行测试，验证各种理论分析和参数模型的正确性、有效性。通过本项目的研究，实现SiGeC HBT关键技术的突破，从而为SiGeC/Si异质结技术在超高速、超高频器件领域的应用奠定坚实的研究基础。

中文关键词： 临界厚度；输运机制；超结；截止频率；

英文摘要： For the problems of SiGe HBT, the substitutional C atoms will be introduced into the heterojunction bipolar transistor in this project, and the key technologies of SiGeC HBT will be studied deeply. The new structure of SiGeC HBT will be proposed.The structure, mechanism, models, characteristics and production process of the new structure device will be analyzed comprehensively and designed optimally. The band-gap of the SiGeC/Si heterojunction will be studied and analyzed. The current transport mechanism of the new device will be explored. The accurate device models and process models will be established, which provides a reliable simulation method for the design of new devices and process. This as a breakthrough, the optimized structure parameters and process parameters of SiGeC HBT will be extracted to obtain the optimized design program of the new structure. The appropriate carbon-doped process and device process conditions will be explored, and the simple and feasible process implementation plan will be developed. On this basis, one of the best device structure will be selected to experiment, and the feature of samples will be tested to verify the correctness and effectiveness of the theory and model. Through the research of this project, the key technology breakthroughs of SiGeC HBT may be achieved, which w

英文关键词： critical thickness；transport mechanism；super junction；cutoff frequency；