基于SOI CMOS工艺的抗辐射MEMS加速度计接口专用芯片关键技术研究

项目名称： 基于SOI CMOS工艺的抗辐射MEMS加速度计接口专用芯片关键技术研究

项目编号： No.61306142

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 无线电电子学、电信技术

项目作者： 刘云涛

作者单位： 哈尔滨工程大学

项目金额： 24万元

中文摘要： MEMS加速度计是航天航空领域的重要敏感器件，微加速度计的抗辐射加固技术和低噪声技术是当前研究的热点。本项目基于SOI CMOS工艺平台开展高阶Sigma-Delta(ΣΔ)数字闭环反馈加速度计接口ASIC芯片研究。针对当前SOI工艺微加速度计ΣΔ接口电路噪声理论研究不足，开展SOI工艺下电路噪声数学模型研究，非线性量化噪声模型建立，电路噪声与量化噪声非线性混叠效应的理论分析及验证。针对高阶闭环ΣΔ微加速度计系统，研究系统闭环稳定性和与输入信号相关稳定性、高阶结构的补偿程度和稳定性关系及稳定控制方案，提出衡量数字加速度计稳定性是否恶化的标准，确定稳定性的判断标准和稳定范围的计算方法。在理论研究的基础上，基于SOI CMOS工艺，研究低噪声、抗辐射接口专用芯片，电路和版图的抗辐射加固技术和冗余设计方法，并通过芯片和加速度传感器测试验证理论模型。本项目的研究具有重要的理论意义和应用价值。

中文关键词： 加速度计；Sigma-delta；抗辐射；低噪声；SOI

英文摘要： Micromachined accelerometer is a key sensing element in aeronautics and astronautics, its radiation-resistant reinforcement and low-noise techniques are key research field. Sigma-Delta(ΣΔ) digital interface ASIC for closed-loop feedback accelerometer is researched in this project based on SOI CMOS technology. With focus on the deficiencies of the noise theoretical research in SOI ΣΔ interface circuit of micromachined accelerometer, mathematical model of electrical noise, nonlinear quantization noise and nonlinear aliasing effect of electrical noise and quantization noise will be theoretically analyzed and verified. With focus on the high-order ΣΔ micromachined accelerometer, the closed-loop stability and signal dependent stability, relationship between compensation degree and stability, and control scheme of stability are researched. Stability criterions of digital accelerometer and the calculation methods of stability criterions and the range of stability will be proposed. Based on theoretical research results, low noise radiation-resistant interface AISC is designed with SOI CMOS technology, radiation-resistant reinforcement technique and redundancy design methods are researched. And the theoretical results will be verified through the chip and accelerometer measurement. The theoretical research in this projec

英文关键词： acceleormeter；Sigma-delta；radiation-resistant；low noise；SOI