基于三维载流子注入理论的新型功率SOI-LIGBT器件结构与模型研究

项目名称： 基于三维载流子注入理论的新型功率SOI-LIGBT器件结构与模型研究

项目编号： No.61504025

项目类型： 青年科学基金项目

立项/批准年度： 2016

项目学科： 无线电电子学、电信技术

项目作者： 祝靖

作者单位： 东南大学

项目金额： 22万元

中文摘要： 功率SOI-LIGBT器件是单片功率集成芯片中的核心组件，其关键是在保证击穿电压、可靠性等性能的基础上，实现大电流能力。本项目将基于三维载流子注入理论，对SOI-LIGBT器件基础理论和技术进行创新研究，包括：1. 创新提出一种600V等级SOI-LIGBT器件结构，通过引入“三维沟道”增大器件等效发射结面积来获得大电流密度。通过利用“大器件等区域夹断耗尽”原理降低发射极表面电场强度来保证高击穿电压。通过采用“高浓度P型埋层”降低器件内部寄生三极管基区电阻来实现高抗闩锁能力。最终，器件电流能力相比于传统器件提升90%以上；2. 提出新器件结构电流密度解析模型，获得电流密度、击穿电压和结构参数的优化关系，指导器件设计。利用模型指导与三维仿真对器件进行优化设计，并完成实验研制。本研究系与国际水平同步的超前性研究，意义重大且具有实用价值。

中文关键词： LIGBT；绝缘体上硅；三维载流子注入；电流密度；可靠性

英文摘要： SOI-LIGBT device is the core component of the monolithic power integrated circuit. Improving the current capability without sacrificing the breakdown voltage and reliability is the pursuit goal in design. In this project, base on the theory of three-dimensional carrier injection, innovation research on the foundations and technologies of the SOI-LIGBT is done, including: 1. a novel 600V-class SOI-LIGBT device structure is proposed. By introducing the “three-dimensionalchannel”, the equivalent emitter junction area is increased and the current density is improved. According to the potential sustaining principle of “pinch-off depletion in JFET region”, the surface electrical field in the emitter region is reduced and high breakdown voltage is assured. By using the “high doped p-type buried layer”, the base resistance of the parasitic bipolar transistor is reduced and the immunity capability of latch-up is improved. Finally, the current density of the proposed SOI-LIGBT is improved by about 90% compared with the conventional structure; 2. the analytical model of the current density for the proposed device structure is proposed. According to the model, the optimal relationship between the current density, breakdown voltage and structure parameters is achieved for designing. The structure optimal design is done under the guidance of the model and three- dimension simulation. Finally, an experimental sample of the proposed SOI-LIGBT is fabricated. .This study is an advanced research with the international level. This project has great theoretical significance and practical value.

英文关键词： Lateral Insulated Gate Bipolar Transistor;Silicon-On-Insulator;Three-dimensional carrier injection;Current density;Reliability