双极晶体管电离和位移协同效应特征及机理研究

项目名称： 双极晶体管电离和位移协同效应特征及机理研究

项目编号： No.11205038

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 物理学II

项目作者： 李兴冀

作者单位： 哈尔滨工业大学

项目金额： 25万元

中文摘要： 双极晶体管是航天器上广泛应用的重要电子器件，在模拟或混合集成电路及BiCMOS电路中有着重要的作用。双极晶体管对电离和位移效应均较为敏感，深入研究其在质子和电子综合作用下产生电离和位移协同效应的特征与机理具有重要的理论和实际意义。迄今，国内外主要在单因素辐照下研究双极晶体管的电离效应和位移效应，而对质子和电子综合辐照时电离效应和位移效应之间的交互作用研究较少。这在很大程度上限制了人们对双极晶体管辐射损伤机理的认识，也不利于对其在空间辐射环境下性能退化进行量化表征。本项目拟在低能质子和电子综合辐照的基础上，基于电性能退化表征、辐照后退火效应分析及深能级瞬态谱测试三种途径，揭示NPN型及PNP型晶体管产生电离和位移协同效应的基本特征与机理，建立双极晶体管电离和位移协同效应损伤物理模型。所得研究结果可为双极器件抗辐射性能优化及在轨电性能退化评价提供理论依据。

中文关键词： 双极晶体管；电离辐射损伤；位移辐射损伤；协同效应；深能级缺陷

英文摘要： Bipolar junction transistors (BJTs), as important electronic components in analog or mixed-signal integrated circuits (ICs) and BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) circuits, are employed for spacecrafts. BJTs are sensitive to both displacement and ionization damage. Therefore, the research on characteristics and mechanisms of synergistic effect of ionization with displacement damage in the BJTs caused by combined radiation of protons and electrons has very important significance and worthiness. Up to now, there are lots of researches on either ionization or displacement effects induced by single irradiation sources for BJTs, while few references are available on the interaction between the ionization and displacement effects in BJTs, which are produced by combined radiation of protons and electrons. This situation limits an insight into the radiation damage mechanisms for BJTs under space radiation environment, and also makes against to characterize the degradation of electrical parameters on orbit clearly. Based on the combined irradiation of protons and electrons with lower energies, this project will discover basic characteristics and propose a damage physical model for the synergistic effect of ionization with displacement damage in both the NPN and PNP transistors, by means of three app

英文关键词： Bipolar junction transistor；Ionization damage；Displacement damage；Synergistic effect；Deep level defect