项目名称: MgZnO/MgO多量子阱的生长、物性调控及其场效应晶体管性能研究
项目编号: No.61306103
项目类型: 青年科学基金项目
立项/批准年度: 2014
项目学科: 无线电电子学、电信技术
项目作者: 王雷
作者单位: 南京工业大学
项目金额: 25万元
中文摘要: 新一代平板显示器的发展迫切需要高迁移率场效应晶体管(FET)为驱动器件。本项目以岩盐矿MgZnO/MgO多量子阱(MQWs)及其FET为研究对象,针对岩盐矿MgZnO的生长机制和MQW载流子浓度的控制两个关键科学问题进行研究。主要研究内容包括:①采用电子束蒸发技术生长高质量岩盐矿MgZnO/MgO MQWs。②利用结构优化和掺杂,实现对MQW光学带隙、电子结构与电学性能的调控。③构建MgZnO/MgO MQWs-FET,检测FET的输出特性、阈值电压、开关比和迁移率等性能。④优化器件结构,提高FET的开关比和迁移率、减小阈值电压和亚阈值斜率,以满足平板显示器驱动的需要。本项目旨在对MgZnO/MgO MQWs的生长、物性调控及其高迁移率FET原型器件的性能作基础研究,探索二维纳米材料及平面器件中电子结构的一般规律及电输运机制。对推动新型平板显示器驱动FET技术具有积极的指导和借鉴作用。
中文关键词: MgxZn1-xO/MgO多量子阱;场效应晶体管;调制掺杂;;
英文摘要: The development of the new generation flat-panel display urgently needs high mobility field effect transistor (FET) as driving device.This project focus on the investigation of rock-salt (RS) MgZnO/MgO multiple-quantum-well (MQWs) and the high mobility MQWs-FET, carry out researches on the growth mechanism of RS-MgZnO and carrier control of MQW. The main research contents include: ① The growth of high quanlity RS-MgZnO/MgO MQWs by electron beam evaporation (EB) technology. ② Regulating and controlling the optical band-gap, electronic structure and electric properties of MQWs by optimizing structure and dopping. ③ Constructing MgZnO/MgO MQWs-FET, then measuring the performance of the FETs, including output characteristics, threshold voltage, switch ratio and mobility. ④ Optimizing the structure of FET to increase the switch ratio and mobility, reduce the threshold voltage and sub-threshold slope, which could meet the need of the driver for flat-panel display. This project is aimed at investigating the growth and property modification of MgZnO/MgO MQWs and the performance of high mobility MQWs-FET prototype devices, exploring the general rule of electron structure and electric transport mechanisms in 2D nanomaterials and planar devices. These works may play a guidance and reference role on pushing forward novel FE
英文关键词: MgxZn1-xO/MgO multiple quantum wells;Field effect transistor;Modulated doping;;