项目名称: 新型半导体激光器光反馈传感机理的系统研究及其应用于线宽展宽因数的测量
项目编号: No.60871031
项目类型: 面上项目
立项/批准年度: 2009
项目学科: 金属学与金属工艺
项目作者: 禹延光
作者单位: 郑州大学
项目金额: 34万元
中文摘要: 光反馈自混合干涉(OFSMI)技术由于具有系统结构紧凑、非接触、光干涉测量的特点而引起传感测试领域研究者的关注。本课题深入研究了光反馈自混合干涉理论及其应用于线宽展宽因数等参数的测量,主要包括:(1)强光反馈水平时OFSMI的理论;(2)不同光反馈水平下,OFSMI系统的模拟行为模型及仿真;(3)OFSMI信号的自适应滤波方法;(4)OFSMI技术应用于激光器线宽展宽因数的测量算法与测试系统;(5)OFSMI技术应用于反馈水平及位移、振动、距离的测量算法及测试系统。理论仿真和实验测试结果显示了测试方法的可行性。与传统干涉测试技术相比,OFSMI测试系统光学结构简单、价廉,使用更加方便、灵活,除应用于实验室外,还可应用于工厂、野外等场合。本课题研究成果,大大促进了OFSMI技术的理论与应用研究进程,具有重要的理论与现实意义。
中文关键词: 新型传感技术;光反馈干涉;半导体激光器;线宽展宽因子
英文摘要: The optical feedback self-mixing interferometry (OFSMI) technology has attracted the attention of researchers in the sensor test field because of its simplicity in system structure and non-contact interferometry. This topic includes the deep research on the OFSMI interferometry theory and its application in the measurement of linewidth enhancement factor(LEF) and so on. The main researches are as follows: (1) The OFSMI theory models in the strong optical feedback level are studied. (2) The Simulation behavior models and numerical simulation of The OFSMI system with different feedback are analyzed. (3) The adaptive filtering methods for OFSMI signals are studied. (4) The algorithm and test system based on the OFSMI technology are used to measure the linewidth enhancement factor of lasers. (5) The OFSMI technology is used in the different optical feedback level and the algorithm and measurement system for the displacement, vibration,and distance. The theoretical simulation and experimental results have proved the feasibility of the test methods. Compared with the conventional interferometry technology, OFSMI system is more convenient for its simple structure and low price. Besides in the laboratory, the OFSMI technology can be applied in other occasions such as factories and open fields. The research results promote the OFSMI process both in the theory and application, which is of significant theoretical and practical value.
英文关键词: new sensing technology;optical feedback interferometry;semiconductor laser;linewidth enhancement factor