碳纳米管电极交叉阵列阻变存储单元构建及开关特性研究

项目名称： 碳纳米管电极交叉阵列阻变存储单元构建及开关特性研究

项目编号： No.61274113

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 无线电电子学、电信技术

项目作者： 张楷亮

作者单位： 天津理工大学

项目金额： 82万元

中文摘要： ITRS指出高集成度和低功耗是oxide-RRAM最为关注的问题;本申请在综合分析RRAM的发展现状基础上，着重围绕高集成、低功耗RRAM设计及纳米存储单元的实现开展研究。首先高温生长CNT,通过Au和热熔胶膜实现常温CNT转移;采用碳纳米管交叉电极阵列构建具有纳米接触的存储单元,进而提高集成度,降低reset电流。利用VOx的低电压开关特性与ZnO的可逆阻变特性构建1S1R结构新型RRAM,避免低阻态reset电流较高,并通过ZnO薄膜掺杂进行调控。为解决交叉阵列中潜通路难题,采用叠层互补结构构建无源阵列RRAM,为后续高集成化发展提供可能（3D集成）。结合镶嵌结构通过TMO-CMP改善界面接触特性,提高电学特性一致性;通过CNTs转移技术解决低温3D集成与高温CNT生长的矛盾;优化基础上分析无源RRAM阻变特性,探索叠层结构阻变机制,为新型无源高密度RRAM的研制提供相关基础与理论。

中文关键词： 阻变存储；碳纳米管；交叉阵列；低功耗；

英文摘要： It has been reported by ITRS that the most focused problems to TMO materials for RRAM manufacturing are to achieve high level integration and low power consumption. In this project, we mainly plan to investigate the design and manufacturing technology of novel RRAM devices with low-power and high level integration and nano-memory cell based on comprehensive analysis of RRAM development status. Firstly, horizontal aligned CNTs are deposited on quartz wafer by high temperature CVD process，and they are transferred from quartz to Si wafer by Au and hot melt adhesive film under atmospheric temperature. Carbon nanotubes crossbar electrode arrays are chosen to form the memory cell with nanoscale contact area, whose purposes are to improve the integration of devices cell and reduce the reset current. Secondly, novel RRAM device cells with one switching and one resistor are proposed based on the following experimental results: the VOx cannot maintain low resistance characteristics under lower sweep voltage and ZnO can be used as functional materials, the reset current of which can be adjusted by doping ions. The combining of the above two materials can avoid the overhigh reset current under lower resistance state. In order to resolve the sneak path problem of the novel passive crossbar arrays devices, complementary resis

英文关键词： RRAM；CNT；crossbar；low power consumption；