超高密度信息存储有机材料的设计合成及调控器件性能的研究

项目名称： 超高密度信息存储有机材料的设计合成及调控器件性能的研究

项目编号： No.21336005

项目类型： 重点项目

立项/批准年度： 2014

项目学科： 数理科学和化学

项目作者： 路建美

作者单位： 苏州大学

项目金额： 310万元

中文摘要： 2010年闻名遐迩的《阿凡达》电影胶片重量高达700公斤说明传统存储技术已经远不能满足现代社会信息量爆炸式增长的需求。本项目就是研究超高密度信息存储的有机材料--大π共轭结构的有机分子，研究分子中推拉电子体系、分子构型、分子中柔性链长短对材料的存储进制（如三进制、四进制等）的影响；研究不同成膜方法和不同分子结构对薄膜中分子排列有序性及薄膜物理稳定性的影响；总结分子结构对器件性能影响的理论规律，探索具有三进制乃至更多进制存储功能的材料分子结构设计、合成的理论依据，以及器件制备的优化工艺参数，进而调控器件存储性能，突破传统二进制存储限制，实现稳定的三进制、四进制乃至于更多进制的储功能材料和器件，使在相同面积内信息存储密度比二进制呈亿倍的增长，实现原本700公斤的阿凡达电影胶片变为一张碟片可以解决，在全世界新型存储技术领域起到原创性和引导性作用。

中文关键词： 多进制材料;电存储;有机半导体;器件制备;电荷传导机理

英文摘要： The world-renowned 3D IMAX movie Avatar consists of 700 kg of film prints indicates that the existing storage materials and technologies have lagged far behind the rapid development of the information society. In this project, series of organic conjugated molecular will be synthesized to fabricate as electrode/organic film/electrode sandwiched device. The effects of molecular structure, pull-push ability of electron donor and acceptor, the length of soft chain, and the different film-forming methods on the device's performance will be precisely studied to conclude the design and synthesis theory of ternary data storage material. The device fabrication technology will be further studied to understand how the different electrode, film thickness, temperature and humidity, sealing or not will affect on the device's performance, such as the switching voltage, ON/OFF current ratio, switching time, and write-read-erase cycles. We hope the optimized parameters of device fabrication can be achieved,and then to combine with the ternary molecular design theory to guide for synthesis quarternary or even senary data storage material, which could increase data storage density revolutionary, for example, using the same 30 memory cells, the storage density of a ternary system is more than 100 million times greater than that of a binary system.Our target is to realize the 700 Kg film prints can be stored in one disk in the future.

英文关键词： multi-ary material;electric memory;organic semiconductor;fabrication of memory device;charge transfer mechanism