CMOS后形成栅极铝平坦化与电化学腐蚀抑制机理研究

项目名称： CMOS后形成栅极铝平坦化与电化学腐蚀抑制机理研究

项目编号： No.61504037

项目类型： 青年科学基金项目

立项/批准年度： 2016

项目学科： 无线电电子学、电信技术

项目作者： 孙鸣

作者单位： 河北工业大学

项目金额： 20万元

中文摘要： 为获得高器件性能、超低功耗、高集成度，晶体管器件尺寸延续摩尔定律等比例缩小，高k介质/金属栅(HKMG)制程代替SiON/多晶硅栅的多栅鳍式立体场效应晶体管(FinFET)已成为45nm及以下先进CMOS工艺关键材料与技术。后形成栅极(RMG)化学机械平坦化(CMP)是实现HKMG关键，决定了芯片上器件性能完整性、可靠性。实现高去除速率、高平坦化效率、抑制界面电化学腐蚀(Galvanic corrosion)与去除选择比是研究适用RMG平坦化抛光浆料的核心挑战。本项目以阿伦尼乌斯速率控制理论、金属缓蚀吸附理论、反应过程暂态理论为依据，采取以化学作用为主、吸附-自钝化-络合-传质-化学溶解表面反应控制的平坦化技术路线，研究CMOS后形成栅极制程Al栅碱性抛光浆料中CMP行为及电化学腐蚀行为与控制关键技术。

中文关键词： 鳍式场效应晶体管；平坦化；后形成栅极；电化学腐蚀；腐蚀抑制

英文摘要： To obtain the high performance, superb low power cost, and advanced integration with the IC devices, the size of the devices on the transistors continues scaling down. Instead of SiON/Poly-Si, multi-gates 3D FinFET with the processing of High k/Metal gate has become the key material and technology for the advanced CMOS fabrication.The RMG material CMP is the hinge for realizing the HKMG processing, due to the crucial influence with the integrated performance and reliability of the devices. It is the core challenge for achieving the parameters of high removal rate,high planarization efficiency, galvanic corrosion controlling, removal rate selectivity, to adapting to the slurry with the RMG planarization. On the basis of the theories with Arrhenius rate controlling, metal corrosion inhibited adsorption and transient state of the reaction, this project adopts chemistry function with priority gived, and surface reaction controlled with adsorption-self passivation-complexing-mass transporting-chemistry dissolution process as the route of planarization technology. It could explore the CMP behavior with the aluminum alkaline polishing slurry for the Al gate applicated in the gate-last process of CMOS fabrication, and the key technology for the controlling of the galvanic corrosion as well.

英文关键词： FinFET;Planazation ;Gate-last;Galvanic corrosion;corrosion cotrolling