The coupling between the electrical transport properties of La2/3Sr1/3MnO3 (LSMO) thin films and structural phase transitions of SrTiO3 (STO) substrates at Ts = 105 K has been investigated. We found that the electrical resistivity of LSMO films exhibit a cusp at Ts, which is greatly amplified by tuning films to the verge of metallic and insulating phases, i.e., to the boundary of two delicate competing electronic states. Our results demonstrate that small amounts of strain can tip the subtle balance of competing interactions and tune the electronic properties in correlated electron materials.
翻译:对La2/3Sr1/3MnO3(LSMO)薄膜的电力运输特性与SrTiO3(STO)基底Ts=105K的结构阶段过渡之间的连接进行了调查,我们发现LSMO薄膜的电阻性在Ts呈现出一个顶部,通过将胶片调整到金属和隔热阶段的边缘,即两个微妙竞争的电子状态的边界,使这种抗电性大为增强。我们的结果表明,少量的电压可以使相互竞争的相互作用的微妙平衡倾斜,并调节相关电子材料的电子特性。