In this paper we analyse the impact of different compile options on the success rate of side-channel analysis attacks. We run horizontal differential side-channel attacks against simulated power traces for the same $kP$ design synthesized using two different compile options after synthesis and after layout. As we are interested in the effect on the produced ASIC we also run the same attack against measured power traces after manufacturing the ASIC. We found that the compile_ultra option reduces the success rate significantly from 5 key candidates with a correctness of between 75 and 90 per cent down to 3 key candidates with a maximum success rate of 72 per cent compared to the simple compile option. Also the success rate after layout shows a very high correlation with the one obtained attacking the measured power and electromagnetic traces, i.e. the simulations are a good indicator of the resistance of the ASIC.
翻译:在本文中,我们分析了不同汇编选项对侧通道分析攻击成功率的影响。我们用合成和布局后两种不同的汇编选项对模拟电源痕量进行了横向不同侧道攻击,对模拟电源痕量进行了合成,对合成和布局后两种不同的汇编选项进行了合成。由于我们对所制作的ACIC的影响感兴趣,我们也对制造ACIC后测得的电源痕量也进行了同样的攻击。我们发现,汇编和超轨选项大大降低了成功率,从5个关键候选人降至3个关键候选人,准确率从75%至90%降至3个关键候选人,与简单汇编选项相比,最高成功率为72%。此外,布局后的成功率与攻击测得的电动和电磁痕量的成功率非常相关,即模拟是衡量ASIC抵抗力的良好指标。