We consider the problem of identifying discontinuous doping profiles in semiconductor devices from data obtained by different models connected to the voltage-current map. Stationary as well as transient settings are discussed and a framework for the corresponding inverse problems is established. Numerical implementations for the so-called stationary unipolar and stationary bipolar cases show the effectiveness of a level set approach to tackle the inverse problem.
翻译:我们考虑了从与电压-电流图相关的不同模型获得的数据中找出半导体装置中不连续的剂量剖面的问题,讨论了固定和瞬态设置,并建立了相应的反向问题框架,所谓的固定单极和固定双极案例的数值执行显示了解决反向问题的定级办法的有效性。