非挥发性阻变存储器的无源集成方式研究

项目名称： 非挥发性阻变存储器的无源集成方式研究

项目编号： No.11304399

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 数理科学和化学

项目作者： 吴曙翔

作者单位： 中山大学

项目金额： 25万元

中文摘要： 阻变存储器因其结构简单、可三维堆叠、擦写速度快以及功耗低等优点，已成为非挥发性存储器领域的研究热点，而提高阻变存储器的抗串扰性能是当前亟需解决的技术关键和难点。本项目在研究NiO基薄膜器件阻变存储特性及整流特性的基础上，提出采用以NiO为存储器和以Li:NiO为选择器，制备阻变存储器的无源交叉阵列。通过研究NiO薄膜中Li的掺杂浓度与其阻变存储特性、整流特性之间的内在作用规律，深入理解阻变存储的微观机制并建立存储和整流特性转换的物理模型。在理论指导下提高器件的抗串扰性能，建立无源RRAM存储可靠性的研究方法。本课题的研究，将有助于澄清器件阻变存储特性的物理机制，加深基于整流特性的无源交叉RRAM阵列的集成方式认识，为优化器件的结构和功能、实现高密度集成的阻变存储器提供理论和实验依据。

中文关键词： 阻变存储器；整流特性；选择器；集成方式；氧化物薄膜

英文摘要： Resistance random acceess memory (RRAM) has become the current hot research area for next-generation nonvolatile application due to its advantages such as simple device structure, easy 3D stackablity, high operation speed, and low power consumption. For the practical application of RRAM, the crucial issue is to improve the anti-crosstalk performances.In this research project, we will investigate resistance switching and rectifying characteristics of NiO film, and further prepare the passive crossbar RRAM array with memroy and selector based on NiO and Li:NiO, respectively. We will also study the intrinsic physical origin of tranisition from memory effect to rectifying effect by Li doping, to further understand the microscopic physical mechanism of resistance switching effect and construct the physical model of the transition from memory to rectifying effect by Li doping. Under the theoretical guidance, we will improve the anti-crosstalk performances and establish the framwork and methodology for the research on the reliability of the passive RRAM. Our research project will help to calrify to physical mechanism of resistance swithing effect and understand integrated way of passive crossbar RRAM array with rectifying characteristic，and thereby provide the theoretical and expermental solution to the optimization of

英文关键词： resistance switching；rectifying characteristics；selector；passive integrated way；oxide thin film