AlGaN/GaN MIS-HEMT器件在质子辐射下的退化机理，寿命预测模型与加固技术研究

项目名称： AlGaN/GaN MIS-HEMT器件在质子辐射下的退化机理，寿命预测模型与加固技术研究

项目编号： No.61474091

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 无线电电子学、电信技术

项目作者： 郑雪峰

作者单位： 西安电子科技大学

项目金额： 76万元

中文摘要： 本项目针对典型AlGaN/GaN MIS-HEMT器件在空间环境中的广阔应用前景和现实中面临的主要问题，基于前期研究基础，深入开展了包括器件在质子辐射下的失效机理、缺陷的基本物理特性及寿命预测模型与加固技术等三方面的研究。通过研究质子辐射下缺陷的产生与器件电学参数退化之间关系，找出影响器件性能的最主要因素，结合材料生长、器件结构、电应力等对器件退化的影响，最终确定了MIS-HEMT器件在质子辐射下的主要退化机理。针对引起退化的主要缺陷，对其基本物理特性以及温度、电场下的退火特性开展了深入研究，为器件建模等提供信息。在此基础上，从诸多因素中找出与失效相关的关键失效敏感因素，建立辐射环境下的器件寿命预测模型；围绕器件退化相关的主要缺陷，从材料及器件角度分别提出抗质子辐射加固理论并进行实际验证。相关研究成果为GaN基MIS-HEMT器件在空间质子辐射环境中长期可靠性的提高提供理论指导与技术支撑。

中文关键词： 氮化镓；质子辐射；绝缘栅HEMT；退化机理；寿命预测

英文摘要： Due to the significant advantages, AlGaN/GaN MIS-HEMTs have received much attention in space environment applications. However, critical issues still need to be solved for reilable operation in space applications. In this project, the degradation mechanism of AlGaN/GaN MIS-HEMTs under proton radiation, the characteristics of defects, lifetime prodiction model and anti-radiation hardening techniques will be researched in-depth, based on our provious study in this research area. By studying the relationship between defect generation and electrical parameters degradation for MIS-HEMTs under proton radiation, the key factors that affects device performance will be discovered. Considering the effects of materials growth process, device structures and electrical stress, the degradation mechanism of AlGaN/GaN MIS-HEMTs under proton radiation can be identified. For the main defects that induces device degradation, the basic physical characteristics will be studied in-depth, considering of the effects of temperature and electric field on the device degradation. This work can provide valuable information for MIS-HEMTs modeling, lifetime prediction, etc. Finally, great efforts will be made to explore the key and most sensitive factors that affect the device degradation, and lifetime prediction model will be successfully built. Condering of the main defects that induces device breakdown, the anti-radiation hardening techniques will be propsoed and verified.The research achievements in this project will have great impact on the improvement of long-term reliability of GaN based MIS-HEMTs in proton radation environments, and lay a consolidate foundation for MIS-HEMTs in space applications.

英文关键词： GaN;proton radiation;MIS-HEMTs;degradation mechanisms;life prediction