隧穿场效应晶体管的结构、特性与模型

项目名称： 隧穿场效应晶体管的结构、特性与模型

项目编号： No.61274087

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 无线电电子学、电信技术

项目作者： 黄大鸣

作者单位： 复旦大学

项目金额： 80万元

中文摘要： 随着金属氧化物半导体场效应晶体管（MOSFET）尺寸的持续小型化和芯片集成度的不断提高，功耗已经成为制约集成电路发展的一个瓶颈问题。与传统MOSFET比较，隧穿场效应晶体管（TFET）的亚阈值摆幅可以突破传统MOSFET的理论极限（60mV/Dec），其开关特性更加陡峭，沟道漏电（关态电流）更小，因此在低功耗应用中具有重要前景。近年来，TFET的研究受到了国际上的广泛关注，研究的重点集中在了解器件的基本特性，开发器件的制备工艺和提高器件的驱动电流。但是，在TFET通向应用的过程中，目前还有许多关键问题需要了解和解决，需要开展深入系统的研究。本项目针对TFET的关键问题，拟开展下述三个方面研究：（1）TFET的结构、量子效应和电学特性的关系，（2）TFET的器件模型和（3）TFET的可靠性。研究的预期结果将为TFET的特性评估、开发和应用提供新的科学知识和模型。

中文关键词： MOSFET；TFET；IV特性；模型；可靠性

英文摘要： With the scaling of metal oxide semiconductor field effect transistor (MOSFET) and with the increase in the device number in an integrated circuit, the power dissipation becomes a fundamental problem. As compared to the conventional MOSFET, tunneling field effect transistor (TFET) can reach a lower subthreshold swing than 60 mV/dec at room temperature, leading to a better switch characteristic and a lower channel leakage at off state. Therefore, TFET has great potential in low power applications. In the recent years, the investigation on TFET has received more attention. The focus of investigation is on the understanding of the fundamental device characteritics, the development of the device fabrication process, and the method in increase the on current. However, for the application of the TFET, there are still many key problems to be understood and solved, and to be investigated deeply and systematically. This project focus on the key issus in the potential application of TFET, and investigate (1) the relationship between the structure, the quantum effect, and the characteristics of TFET, (2) the device modeling of TFET, and (3) the relibility of TFET. The results of this investigation are expected to provide new scientific knowledge and models for the understanding, characterization, and application of the TFE

英文关键词： MOSFET；TFET；IV characteristics；modeling；reliability