半导体纳米线阵列的制备和转移及光伏特性研究

项目名称： 半导体纳米线阵列的制备和转移及光伏特性研究

项目编号： No.61204014

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 信息四处

项目作者： 徐韬

作者单位： 上海大学

项目金额： 24万元

中文摘要： 半导体纳米线结构凭借其独特的光吸收特性和电输运性能，在新型太阳电池中具有很大的潜在应用价值。本项目计划开展对半导体纳米线从阵列制备、性能表征到器件应用的系统研究。结合自下而上的纳米球自组装和自上而下的物理刻蚀技术，发展针对硅纳米线阵列的低成本、宏量和可控的制备方法；并且拓展该方法的兼容性，制备光电性能更为优异的砷化镓纳米线阵列。提出纳米线阵列在不同基底上的逐层剥离和大面积转移的方法，将纳米线阵列与柔性基底相结合以实现对其低成本的应用。发展针对单根半导体纳米线的表征技术，揭示纳米线的表面形貌、阵列结构和掺杂浓度等因素对其光学和电学性能的影响规律。研究基于纳米线的径向P-N结，实现在充分吸收太阳光的同时光生载流子的快速分离和输运。最后，构筑一个基于半导体纳米线阵列的光伏器件原型，为新一代基于纳米材料的低成本高效率的太阳电池器件的开发和应用做好基础探索。

中文关键词： 半导体纳米线；纳米球刻蚀；原子尺度表征；径向p-n结；太阳电池

英文摘要： Semiconductor nanowires are attractive for potential applications in optoelectronics including photovoltaics in which they could bring distinct advantages such as light trapping and efficient carrier collection. This project aims at investigating the fabrication, characterization and further application in devices of semiconductor nanowire arrays. In the first part of this project, a low-cost, high-throughput and controlled method by combining nanosphere lithography and reactive ion etching will be used to fabricate aligned silicon nanowire arrays with uniform coverage. Moreover, the same method will be applied on materials with superior carrier mobility and direct bandgap as gallium arsenide (GaAs), in order to form GaAs nanowire arrays. The fabricated semiconductor nanowires will be then massively transferred onto another flexible substrate by using a peer-off method, which exhibits the promising potential for the integration of nanowires on versatile substrate. In the second part of this project, a field effect transistor device based on single semiconductor nanowire will be fabricated to investigate the electrical transport properties of such nanowire. The influence of the morphology, array structure and doping level of semiconductor nanowires on their optical and electrical properties will be intensively st

英文关键词： semiconductor nanowire；nanosphere lithography；atomic scale characterization；radial p-n junction；solar cell