具有沟槽-场限环复合终端双芯GCT的关键技术研究

项目名称： 具有沟槽-场限环复合终端双芯GCT的关键技术研究

项目编号： No.51477137

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 电工技术

项目作者： 王彩琳

作者单位： 西安理工大学

项目金额： 85万元

中文摘要： 针对高频电力电子技术快速发展对电力半导体器件提出的大容量、低损耗、高可靠性及集成化等要求，本项目提出了一种具有沟槽-场限环复合终端的双芯门极换流晶闸管新结构，是将两个具有波状基区的GCT芯片集成在一个硅片上同时实现低通态与关断损耗及可靠的换流特性；并采用了新复合终端来提高器件的终端击穿电压和有效面积利用率，缓解内部的电流集中，降低高温漏电流，使新器件既有优良的电学特性，又有简单的制作工艺。本课题拟利用器件与工艺模拟软件ISE研究新器件内部换流机理和高温下的静、动态特性，以及新终端结构的耐压及其稳定性，探索芯片的制作工艺、集成化的封装新结构及门极硬驱动等关键技术。基于特性优化与工艺研究结果，提取4.5kV/2kA双芯GCT的纵、横向结构参数，设计光刻版图，确定工艺实施方案，试制样品，实现GCT芯片与门极硬驱动电路的集成化封装，为在国内现有技术条件下开发大功率IGCT器件开辟一个新途径。

中文关键词： 门极换流晶闸管；双芯；结终端；制作工艺；硬驱动

英文摘要： Aim to the requirements of high capability，low loss, high reliability and integration of power semiconductor devices with rapidly development of high frequency power electronic, the project presents a new dual-GCT structure with a new trench and FLR combined termination,in which two GCT chips with the corrugated p base region are integrated into a wafer. The dual-GCT can realize the low conduction and turn-off losses and reliable current commutation performance simultaneously; the combined termination can provide the high termination breakdown voltage and chip area availability，alleviate the current concentration and decrease the high temperature leakage current. Thus the new dual-GCT device has the better electrical characteristics and simple fabrication process. The project plan is that the current commutation mechanism, static and dynamic characteristics at high temperature and the termination breakdown voltage and its stability of the new termination are firstly studied by ISE simulator. And then the key techniques, such as, fabrication process of the new dual-GCT chip, integrated package structure and gate hard driven are explored by experiment. Based on the results of characteristics optimization and process experiments, the vertical and lateral structural parameters of 4.5kV/2kA Dual-GCT chip are extracted, a set of photolithgraphy layouts are designed, and the process implementation scheme is determined and the simple of new device is developed. Lastly, the intrgrated package structure with hard driven circuit are realized. So the project will exploit a new technique route to develop high power IGCT devices under the existing technical equipment in domestic.

英文关键词： Gate Commutated Thyristor(GCT);dual chip;junction termination;fabrication process;hard driven