基于机械可控裂结法实现二维材料应力的精确控制并研究其电学、谱学、电化学活性等性质的变化

项目名称： 基于机械可控裂结法实现二维材料应力的精确控制并研究其电学、谱学、电化学活性等性质的变化

项目编号： No.21503179

项目类型： 青年科学基金项目

立项/批准年度： 2016

项目学科： 数理科学和化学

项目作者： 杨扬

作者单位： 厦门大学

项目金额： 22万元

中文摘要： 本项目旨在发展通过机械可控裂结法精确、定量地调控石墨烯、二维材料的应力的方法学，从而对石墨烯、二维材料的一些基础科学问题展开具体研究，包括压电现象、电子输运、拉曼光谱和电化学活性等。机械可控裂结法具有在亚埃米数量级上对纳米间隔进行精确调控的能力，这源于该方法所采用的特殊实验装置具有精确调控样品应力的能力。申请人首次提出将该方法用于石墨烯、二维材料的应力调控；提出了利用微纳加工工艺，对测试微芯片上方的电极对进行设计，实现样品材料取向的快速、准确定位；提出了利用介电泳方法，实现在测试微芯片上方直接生长石墨烯、二维材料的设想；定量、精确地研究少数层石墨烯、二维材料的压电性质；选取铁氰化钾、多巴胺-抗坏血酸等经典电化学体系，考察石墨烯、二维材料应力变化条件下电化学活性的变化；利用机械可控裂结法和拉曼光谱的联用，实现石墨烯、二维材料电子输运和谱学性质的协同研究。

中文关键词： 应力；二维材料；机械可控裂结法；拉曼光谱；电化学

英文摘要： Graphene and two-dimensional materials had attracted great interests recently. This project aims to realize the precise adjustment of the stress of graphene and two-dimensional materials by Mechanically Controllable Break Junction (MCBJ) method. Because MCBJ can adjust the stress of sample fixed on it and tune nanogap size at angstrom resolution, it had been utilized extensively in metallic conductance quantization and molecular electronics. Herein we propose the application of MCBJ for adjusting the stress of graphene and two-dimensional materials for the first time. In this experimental protocol, the electrodes array on the microchip will be designed and patterned by Electron-Beam Lithography in order to match the orientation of graphene and two-dimensional materials conveniently, then the piezoelectricity of single or a few layers of graphene and two-dimensional materials can be investigated quantitatively. Small electrolytic cell will be designed and added onto the surface of microchip to provide a test-bed for electrochemical study. A proposal for in-situ growth of graphene and two-dimensional materials by dielectrophoresis is also presented. Moreover, the response of graphene and two-dimensional materials on stress change will be studied by a combined MCBJ and Raman spectroscopy approach.

英文关键词： Stress;Two-dimensional Materials;Mechanically Controllable Break Junction;Raman spectroscopy;Electrochemistry