项目名称: 硅通孔(TSV)3D封装中的差分TSV结构电传输特性研究
项目编号: No.61306135
项目类型: 青年科学基金项目
立项/批准年度: 2014
项目学科: 无线电电子学、电信技术
项目作者: 孟真
作者单位: 中国科学院微电子研究所
项目金额: 29万元
中文摘要: 集成电路3D堆叠封装技术近年来发展迅速,采用硅通孔(TSV)技术是3D封装发展的主要趋势。近年来国内外专家在TSV电特性方面已开展了较深入的研究,但研究内容大多集中于单端TSV的传输特性,对差分TSV传输特性的深入研究近乎空缺。而随着信息技术传输速率的不断提高,采用差分链路传输高速信号已成为通用的方式,因此差分TSV结构将会是采用TSV技术的3D多层高密度封装中的一种不可避免的互连结构,尽快开展差分TSV电传输特性的研究工作将是十分必要的。本项目将以差分对TSV结构为研究对象,分析主流实现工艺中所采用材料特性、结构参数对差分对其电传输特性的影响,探明各种工艺流程中易出现的工艺偏差对特性的影响程度,为后期工业生产中的工艺、流程选择提供理论依据。并对差分对TSV结构的频响、阻抗、串扰等问题进行建模,建立主流实现工艺下的宽频寄生参数模型,有助于后继TSV差分链路设计规则的建立。
中文关键词: TSV封装;差分对TSV 结构;RLCG寄生参数模型;三维电磁场分析;
英文摘要: The 3D stacked package technology develops rapidly in recent years,the use of through silicon via ( TSV ) technology is the main trend in the development of 3D package. Domestic and foreign experts have been carried out in-depth study in the field of electrical characteristics of TSV, but studies mostly focused on single-ended transmission characteristic of TSV, in-depth study of the transmission characteristics in TSV differential pairs is almost vacant. With the continuous improvement of transmission rate, the use of differential transmission link to translate high-speed signal has become a general way. The differential TSV structure will be an inevitable interconnection structure in 3D IC multi-layer high density packaging. It is necessary to carry out TSV electrical transmission characteristics in 3D IC using through silicon via technology as soon as possible. The differential TSV structure is the object of study in this project. We analyze the impact of the structural parameters and material characteristics of the TSV differential pair on signal transmission in the mainstream technology used, find out various processes which are liable to occur during the process and its effects on characteristics, and provide theory basis for the industrial production process and process selection. We made models of TSV di
英文关键词: TSV package;differential TSV structure;RLCG parasitic parameter model;3D electromagnetic field analyzing;