CMOS集成电路近阈值设计理论和关键技术研究

项目名称： CMOS集成电路近阈值设计理论和关键技术研究

项目编号： No.61271137

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 无线电电子学、电信技术

项目作者： 胡建平

作者单位： 宁波大学

项目金额： 80万元

中文摘要： 针对数字应用系统对高速、低功耗设计的强烈需求以及目前纳米级CMOS集成电路功耗急剧增大的趋势，本项目通过建立MOS器件和近阈值电路的理论分析模型，开展CMOS电压模电路和高速电流模的近阈值设计理论与方法的研究，探索逻辑电路的近阈值新结构，并应用于典型功能电路的低功耗设计。 近阈值电路的晶体管工作在中等反型状态，有别于传统CMOS电压模电路和电流模电路的强反型状态，也不同于亚阈值电路的弱反型状态。当前，MOS器件和逻辑电路的近阈值电路理论分析模型建立方法、CMOS电压模电路和电流模电路的近阈值设计理论与方法、近阈值新型电路结构等开拓性和系统性的研究尚处于空白。因此，本项目的开展将完善集成电路设计理论和方法，具有重要的学术意义和应用价值。

中文关键词： 集成电路；低功耗；近阈值设计；建模；

英文摘要： In order to meet the strong demands of high speed and low power digital application system, and the sharp increasing trend of the power consumption in the nanometer-level CMOS integrated circuits, this project researches the establishment of the theory analysis models for the MOS device and circuits in near-threshold region, and carries out the researches of the near-threshold design theory and method for the CMOS voltage-mode circuits and current-mode circuits. The project also explores the new structures of the logic circuits for near-threshold region. The near-threshold design theories and methods will be applied to the typical function blocks. The MOS transistor of the near-threshold circuits works in the moderate inversion state, which is different from the traditional voltage-mode and current-mode CMOS circuits in strong inversion state, and also is different from the sub-threshold circuits in the weak inversion state. At present, the pioneering and systematic researches are still in the blank, which include the establishment of the theory analysis models for the MOS device and circuits in near-threshold region, the near-threshold design theory and method for the CMOS voltage-mode circuits and current-mode circuits, and the new structures of the logic circuits for near-threshold region. Therefore, this pr

英文关键词： Integrated Circuits；Low-power；Near-Threshold Design；Modeling；