II-VI族低维半导体微纳器件的构筑及其光电性能的原位研究

项目名称： II-VI族低维半导体微纳器件的构筑及其光电性能的原位研究

项目编号： No.51472097

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 一般工业技术

项目作者： 翟天佑

作者单位： 华中科技大学

项目金额： 83万元

中文摘要： 低维II-VI族半导体材料由于其独特的结构和优异的光电性质在光电器件方面有着重要的应用前景。传统的非原位表征技术难以得到材料结构与器件性能的直接关联性，从而限制了光电器件性能的进一步提高。本项目以低维II-VI族半导体材料的设计和制备为基础，在扫描电镜内部原位搭建光电器件原型或观测已构筑的光电器件(光探测器件)，通过对单根低维纳米材料的微观结构、光学性能和电学性能的一体化表征测量，研究低维材料尺寸、异质结构、电极与材料界面等对光电器件(光探测器)性能的影响规律，探索低维结构、光电转换过程和器件性能之间的关联机制。建立原位、实时表征光电转换器件的新方法，直观和真实地认识光电转化过程，揭示光电转换的内在机制，为开发新型光电功能材料和构建高性能光电器件提供新思路。

中文关键词： 光电功能材料；微纳结构；光电器件；原位技术；无机半导体

英文摘要： Low-dimensional II-VI semiconductor materials are ideal candidates for the opto-electronic converting device due to their specific structures and distinct optoelectronic properties. It's difficult to get the direct relationship between materials structures and devices performances through traditional non-in-situ characterization techniques. It usually affects the further improvement of the optoelectronic devices. In this project, the applicants will build opto-electronic devices based on low-dimensional II-VI semiconductor structures inside SEM. The microstructures and behaviors of I-VI semiconductor structures during the opto-electronic converting process will be investigated. Through combining the SEM、CL and nano tip techniques, the microstructures of II-VI materials, optical properties and electronic properties are characterized together. We will investigate the factors that influence the optoelectronic performances including size, heterostructrues, and interface between electrodes and materials, and search after the related mechanism between microstructures, optoelectronic converting process and device performance. We will establish a novel in-situ technique to characterize the opto-electronic converting devices, and know directviewingly and veritably the dynamic opto-electronic converting process. This projects aims to explore the intrinsic optoelectronic mechanism so as to provide new concepts for the development of novel optoelectronic functional materials and constructions of high-performance optoelectronic devices.

英文关键词： Optoelectronic Materials;Micro/Nano Structrues;Optoelectronic Devices;In-Situ Technique;Inorganic Semiconductor