强电场下InAlN/GaN异质结构的输运性质及其退化机理研究

项目名称： 强电场下InAlN/GaN异质结构的输运性质及其退化机理研究

项目编号： No.61306110

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 无线电电子学、电信技术

项目作者： 杨学林

作者单位： 北京大学

项目金额： 30万元

中文摘要： 具有高二维电子气浓度的InAlN/GaN异质结构材料在高频、高功率电子器件领域具有重大的应用前景。但随着器件特征尺寸不断缩小，强电场下的载流子输运行为对器件性能的影响益发强烈，已成为制约器件性能提高的瓶颈。本项目以掌握InAlN/GaN异质结构的强电场输运规律和探索其物理机制为目标，以高幅值窄脉冲电压信号测量系统及宽温区深能级瞬态谱为主要实验手段，开展强电场下InAlN/GaN异质结构的输运性质及其退化机理研究，主要内容涉及高质量InAlN/GaN异质结构的MOCVD外延生长和缺陷抑制、强电场下的电-声子相互作用和热电子的能量及动量驰豫机制、缺陷在高温强电场作用下的产生和演化规律及其对载流子输运行为和器件性能退化的影响。本项目申请人及所在课题组近年来一直从事与该领域相关的研究工作，具备了良好的工作基础。研究内容是当前国际上GaN基异质结构材料和器件的前沿领域，具有重要的科学意义和应用价值。

中文关键词： InAlN/GaN 异质结构；强电场；载流子输运；缺陷；退化

英文摘要： InAlN/GaN heterostructures with high two-dimensional electron gas density are most promising for high-frequency and high-power electronic devices applications. However, with devices scaling down, the effects of high field transport properties are increasingly significant, which is one of the bottlenecks limiting performance of the devices. This project is aimed to understand the high field transport behaviors and the physics behind in InAlN/GaN heterostructures. By using experimental systems of high voltage and narrow linewith pulse generator and broad temperature range deep-level transient spectroscopy, we will investigate high electric field transport properties and degradation mechanisms in InAlN/GaN heterostructures. The main research contents include: MOCVD epitaxial growth and dislocation suppression of high quality InAlN/GaN heterostructures, electron-phonon interactions and hot electron energy and momentum relaxation mechanisms at high field, dislocation evolution as well as its effects on transport properties，and degradation mechanisms at high field and temperature. The applicant and the affiliated research group have been focusing on the relevant works during the last ten years,accumulating extensive experience. The research contents are frontier areas in GaN based heterostructures materials and device

英文关键词： InAlN/GaNheterostructure；high electric field；carrier transport；defects；degradation