高Al组分AlGaN应变量子结构制备与特性研究

项目名称： 高Al组分AlGaN应变量子结构制备与特性研究

项目编号： No.11204254

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 物理学I

项目作者： 李金钗

作者单位： 厦门大学

项目金额： 30万元

中文摘要： 高Al组分AlGaN低维量子结构为大失配应变、强极性体系，具有复杂、特殊的几何结构、电子结构以及量子跃迁的选择规律。了解应变、极化场与其能带、量子能级的内在关联，掌握其调控规律，不仅对于丰富和发展宽禁带半导体物理学具有重要的意义，还将为Ⅲ族氮化物半导体在短波长光电子器件的应用奠定科学基础。本项目将结合第一性原理计算和MOCVD外延生长方法，从理论模拟设计、实验外延生长和特性表征方面，开展高Al组分AlGaN低维应变量子结构制备及其特性研究。在掌握应变和极化场的调控规律的基础上，通过能带工程，设计新型应变量子结构，以期达到应变、极化、能带结构的调控；探索在非平衡条件下，高Al组分AlGaN应变量子结构的外延生长技术；深入研究应变、极化场与其能带、量子跃迁选择规律、光学性质的内在关联；在此基础上，优化应变量子结构，以提高载流子量子限制能力，最终获得高电子空穴复合效率的量子结构。

中文关键词： AlGaN；量子结构；金属有机化学气相沉积；紫外发光二极管；

英文摘要： AlGaN based quantum structure materials are very promising materials for the applications in short wavelength of optoelectronic devices (both emitters and detectors) and high power/temperature electronic devices. However, due to the high strained and strong polarization field, the high-composition AlGaN based quantum structures have unique geometric structures, electronic structures, and selection rule of quantum transitions. And they are still lag behind. In this proposal, we will focus on fabrication and characteristic of strained AlGaN quantum structures with high Al content. To understand the strain effects within the AlGaN quantum structures, comprehensive theoretical simulations will be performed by the first-principles firstly. Based on the simulation results, novel strained quantum structures will be designed to modify the strained effect and energy band structure. Accordingly, growth kinetic processes of strain modified quantum structures will be studied by metalorganic chemical vapor deposition method (MOCVD). After growth, the quality of interface, strained field of the AlGaN quantum structures will be analyzed by scanning electron microscopy, transmission electron microscopy, and atomic force microscopy. The optical properties will be investigated by photoluminescence, cathodoluminescence, and ellips

英文关键词： AlGaN；Quantum structure；MOVPE；UV LED；