硅纳米线结构量子点量子比特的机理与实验研究

项目名称： 硅纳米线结构量子点量子比特的机理与实验研究

项目编号： No.61474041

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 无线电电子学、电信技术

项目作者： 杨红官

作者单位： 湖南大学

项目金额： 76万元

中文摘要： 以硅纳米线结构构筑完全电学操控与测量的量子比特器件，为未来单片集成的量子芯片的研发提供理论基础和技术支持。 本项目基于硅纳米线结构构造硅基耦合量子点体系，开展硅量子比特完全电学操控和测量的理论和实验研究。(1) 通过对硅纳米线结构栅控量子点的电子结构和耦合过程特征的分析，理解影响硅量子比特中信息保存、变换和退相干过程的机制；(2) 研究采用振荡电场对量子态进行快速逻辑操作的方法，以及在电学环境下高保真测量量子态的方法；(3) 探索硅纳米线结构耦合量子点体系量子比特器件和测量用电荷敏感电流计的设计方法；(4) 利用微纳加工工艺技术制备量子比特测试结构，摸索优化的工艺参数及制备条件的控制问题。

中文关键词： 量子点；量子比特；硅纳米线；量子芯片；单电子传输

英文摘要： The all-electrical operational quantum bits are constructed based on silicon nanowire structure, which will provide the theoretical basis and technical support for the realization of monolithic integrated quantum computer. In our project, the electrical manipulations and measurements of the silicon qubits in quantum dots defined by the gated barriers on silicon nanowires will be investigated theoretically and experimentally. Firstly, we analyze the properties of the electrical structure and the quantum state coupling in silicon quantum dots, and understand the principles of storing, exchanging and decoherence of quantum information in the silicon qubits. Next, we search the fast logic operation principles of silicon qubits using the pulsed gates, and explore the high-fidelity testing techniques of quantum states in silicon qubits using electric fields. And we design the silicon qubits in quantum dots constructed by the gated barriers and the single electron resolution electrometer based on single electron transistor. Finally, we will prepare some testing samples of silicon qubits using the micro fabrication technology and obtain the control conditions of process parameters.

英文关键词： quantum dots;quantum bits;silicon nanowires;quantum chip;single electron transfer