基于多场耦合效应的多孔介质填铜协同机制研究

项目名称： 基于多场耦合效应的多孔介质填铜协同机制研究

项目编号： No.61474019

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 无线电电子学、电信技术

项目作者： 何为

作者单位： 电子科技大学

项目金额： 84万元

中文摘要： 基于多场耦合效应的多孔介质填铜协同机制研究是制约高密度互连印制电路板和集成电路封装基板高阶高密度任意层互连特性及可靠性进一步发展的瓶颈，是目前国际上研究的热点和难点。经过前期的研究我们发现,影响微埋盲孔、通孔电镀填铜的主要问题在于二次电场线非等同性分布,而电镀添加剂、电流、温度、振动是影响电场线分布的关键因素,但基于多场耦合效应的多孔介质填铜协同机国内外还没有形成相应的理论,这使得电镀填铜的研究变得极为困难。本项目旨在已有的基础上应用电化学分析方法、量子化学及表面分析技术深入探讨各类电镀添加剂、电场和温度场之间协同交互作用规律，研究Cu 互连微埋盲孔、通孔填充过程中多场耦合机制对铜沉积过程的影响，进一步建立相应的电场、温度场、电镀添加剂同电结晶铜作用机理模型，从理论上阐释各类添加剂官能团结构衍生物对电场线分布的影响规律及作用机理，逐步完善多场耦合效应对多孔介质填铜的影响及其协同机制研究。

中文关键词： 电镀铜；电镀添加剂；电化学测试；量子化学；多场耦合

英文摘要： The use of electrodeposited copper for filling micro-vias has become a new research hotspot in the field of the Cu interconnected of any layer of both HDI printed circuit boards and IC package substrates. As both microvia dimensions and trace widths become smaller, the speed of signal transmission become faster and which decrease the reliability of the structure system, the ability of copper filling processes to consistently produce void-free copper filled microvias and traces with acceptable cross sectional profiles comes under increasing pressure. After a long research we found that the main factors which determine the through-hole and blind/buried microvia filling by copper electroplating are the electric field distribution. Furthermore, the uniformity of the electric field inside the hole is mainly determined by the synergistic interactions of those factors(the adsorption of chemical additives/current density/temperature field /vibration frequency), especially for the field synergy analysis. Although various experimental techniques and orthogonal design methods have been developed to ensure proper concentration of every additive in the copper plating solution, little is known about the relation between the electric field distribution and structural properties of diverse additives in such a complicated multi-field coupling. This tempted us to investigate the filling mechanism in blind/buried microvias and through-hole metallization by copper electroplating with the different structural characteristics of the organic additives and its field synergy analysis for a copper interconnection system. The synergistic interactions of the multi-field in a copper plating solution for bottom-up filling of the blind/buried microvias and butterfly technology of through-hole filling have been characterized by electrochemical experiment、quantum chemical calculations and scanning electronic microscopy (SEM).Compared with the theory analysis of single via filling and the actual process of plating, the mechanisms of interaction between the electric field distribution and its field synergy analysis such as the structural properties of diverse additives have been further studied. The probability models of the multi-field coupling are correspondly established based on the experimental results. After completion of the project, it will break the development bottleneck in the field of high-end HDI PCB and IC package substrates and provides theoretical basis for bottom-up filling of the blind/buried microvias and butterfly technolgy of through-hole filling.

英文关键词： Copper electroplating;Electroplating additives;Electrochemical;Quantum chemical calculations;field synergy