基于表面势的双栅非晶InGaZnO薄膜晶体管电路仿真模型研究

项目名称： 基于表面势的双栅非晶InGaZnO薄膜晶体管电路仿真模型研究

项目编号： No.61504003

项目类型： 青年科学基金项目

立项/批准年度： 2016

项目学科： 无线电电子学、电信技术

项目作者： 何红宇

作者单位： 北京大学

项目金额： 18万元

中文摘要： 与单栅结构相比，双栅结构的非晶InGaZnO薄膜晶体管能增强电学性能、提高稳定性、简化电路结构，已成为近年来的研究热点。该器件沟道区存在陷阱态，会同时影响迁移率和电荷分布，且双栅之间存在电荷耦合，其建模存在表面势计算和电荷分析的技术难点。本项目拟在已有研究基础上，开发基于表面势的电路仿真模型，主要内容包括：第一，基于沟道材料带隙中指数分布的陷阱态密度，高效求解表面势，分析电荷耦合关系，建立长沟道器件的电流和电容模型；第二，分析温度、电场增强的载流子发射机理，建立泄漏电流模型，并考虑沟道长度调制、kink效应和串联电阻效应，建立适用于短沟道器件的集约模型；第三，优化模型参数的提取流程，用Verilog-A语言实现模型，并进行电路仿真验证。项目开发双栅非晶InGaZnO薄膜晶体管的集约模型，对相关集成电路设计产业，具有深远的意义。

中文关键词： 薄膜晶体管；解析模型

英文摘要： The double-gate amorphous InGaZnO thin-film transistors (TFTs) have higher electric performance, higher stability, and can simplify the circuit structure, comparing with the single-gate TFTs. The DG TFTs have gained more and more attentions in recent years. In the DG TFTs, the trap states in the channel can affect both the mobility and the charge distribution, and the charge couple between the two gates. The surface potential calculation and charge analysis are the key problems in the modeling of the DG TFTs. This proposal is the continuous work on the proposer’s available research foundation, and develop the surface-potential-based model for the circuit simulation. The main contents are listed as: First, considering the exponential distribution trap states density within the energy gap in the channel material, solving the surface potential equations effectively, analyzing the charge couple, the drain current model and the capacitances model are developed for the DG TFTs with long channel length. Second, analyzing the temperature, electric field enhanced carrier emission mechanism, the leakage current model is developed. Considering the channel length modulation effect, kink effect, and series resistance effect, the compact model is developed for the short channel devices. Third, optimizing the modeling parameters extraction, and realizing the model with the Verilog-A language, the model is verified by the circuit simulation. The proposal develop the compact model for the DG amorphous InGaZnO TFTs, is useful and important for the integrated circuit design.

英文关键词： Thin-film transistor;Analytical model