垂直磁各向异性半金属铁磁电极到半导体自旋注入的研究

项目名称： 垂直磁各向异性半金属铁磁电极到半导体自旋注入的研究

项目编号： No.51471029

项目类型： 面上项目

立项/批准年度： 2015

项目学科： 一般工业技术

项目作者： 徐晓光

作者单位： 北京科技大学

项目金额： 80万元

中文摘要： 基于磁性金属和高迁移率半导体的自旋场效应晶体管是一种能同时操控电子的电荷和自旋自由度的自旋电子学器件。其实验构筑和应用遇到的主要瓶颈之一是如何在微纳尺度下实现从金属电极到半导体的高效自旋注入。垂直磁各向异性半金属铁磁薄膜的发展为该难题提供了一条可能的解决途径，它兼具高自旋极化率和垂直磁各向异性等优点，能够同时满足自旋场效应晶体管对铁磁电极的要求：提供高自旋极化电流和微纳尺寸下稳定的单畴结构。申请人所在团队通过多年研究，成功实现了具有垂直磁各向异性的半金属Co基全Heusler合金薄膜，并将其作为磁性电极，初步开展了由半金属单层薄膜电极到半导体纳米线自旋注入的研究。但垂直磁各向异性半金属铁磁电极到半导体自旋注入的研究工作尚待开展。我们拟借助本项目支持，在前期工作基础上，开展垂直磁各向异性半金属铁磁电极到半导体纳米线自旋注入的研究，设计半金属铁磁电极，修饰半金属/半导体界面，实现高效自旋注入。

中文关键词： 自旋电子学；半金属；垂直磁各向异性

英文摘要： Spin field effect transistor (Spin-FET) is a kind of hot pursued spintronic device based on magnetic metals and high mobility semiconductors, which manipulates charge and spin of electrons synchronously. However, the realization of effective spin injection is one of the key problems for the application of Spin-FET devices. The development of half-metallic perpendicular magnetic anisotropic ferromagnetic electrodes supplies a possible solution for spin injection from metallic electrodes to semiconductors due to its high spin polarization and perpendicular magnetic anisotropy, which meet the requirements of providing spin polarized current and single magnetic domain structure at micro/nanoscale. Our previous studies have realized half-metallic full-Heusler alloy based perpendicular magnetic anisotropic ferromagnetic electrodes. We have also begun the study on spin injection from half-metallic electrode to semiconductor nanowires. However, there is still a blank about the spin injection from half-metallic perpendicular magnetic anisotropic ferromagnetic electrodes to semiconductor nanowires. There must contain fruitful physical phenomena and materials problems to be explored. Therefore, we are planning to focus on the research about the spin injection from half-metallic perpendicular magnetic anisotropic ferromagnetic electrodes to semiconductor nanowires under the support of NSFC. By designing half-metallic ferromagnetic electrodes and modifying the interface between half-metal and semiconductor, it is viable to realize high effective spin injection from half-metallic perpendicular magnetic anisotropic ferromagnetic electrodes to semiconductor nanowires.

英文关键词： Spintronics;Half-metal;Perpendicular magnetic anisotropy