全息-湿法刻蚀200nm周期X射线硅透射光栅

项目名称： 全息-湿法刻蚀200nm周期X射线硅透射光栅

项目编号： No.11275201

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 数理科学和化学

项目作者： 邱克强

作者单位： 中国科学技术大学

项目金额： 90万元

中文摘要： 惯性约束聚变等离子体诊断与天文物理等领域需要高线密度，高高宽比透射光栅实现高能X射线光谱测量。先光刻产生光刻胶掩模图形，再在掩模光栅槽中电镀沉积黄金是目前X射线透射光栅制备的主要方法，金光栅线条高度、侧壁陡直度与粗糙度由掩模决定。对于目前两种常用光刻技术- - 全息干涉与电子束光刻，制作周期200nm，栅线高度1μm，侧壁陡直而光滑的掩模图形，难度大，代价高。 利用碱性溶液（如KOH）对<110>硅片的各向异性刻蚀容易制备高高宽比透射光栅，栅线侧壁陡直而光滑，且所需光刻胶掩模槽深不大于100nm。本项目拟研究200nm周期的自支撑硅透射光栅的制备技术，代替传统金透射光栅。通过全息光刻在镀有氮化硅的硅基底上产生大面积光刻胶光栅图形，使用反应离子刻蚀将掩模图形转移到氮化硅中，最后以氮化硅为掩模，使用氢氧化钾溶液腐蚀获得硅光栅结构。

中文关键词： X射线；闪耀透射光栅；全息光刻；纳米压印；对准

英文摘要： Freestanding gratings with high density and high aspect ratio bars are needed for spectral analysis in plasma diagnostic in Inertial Confinement Fusion and in X-ray astrophysics. The grating structures are usually achieved by patterning in photoresist by lithography and then transfering the mask patterns into gold by electroplating.The height, aspect ratio and sidewall stepness and roughness of the gold grating bars are limited by those of the photoresist grating bars.It is very difficult and expensive for photographic lithography and electron beam liththography to generate 200nm period gratings with 1 μm-tall grating bars with steep and smooth sidewalls. A high aspect ratio transmission grating with vertical and smooth sidewalls, can be achieved by anisotropic etching of <110> silicon wafers in aqueous alkaline solution such as potassium hydroxide, and the required groove depth of photoresist grating,generated by lithography, is less than 100nm. In this projetct, a free standing silicon transmission grating with 200nm period will be fabricated and substitute for the tranditional gold transmissin grating.The grating patterns in the resist layer on a silicon wafer on which a thin silicon nitride layer is deposited, are written by holographic lithography and transferred into the silicon nitide with RIE.Then

英文关键词： X-ray；blazed transmission grating；photography lithography；Nanoimprint lithography；alignment